BD646 ISC | Alldatasheet
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BD646
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V (BR)CEO= -60V(Min)
- High DC Current Gain : h FE= 750(Min) @IC= -3A
- Low Saturation Voltage
- Complement to Type BD645
APPLICATIONS
- Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICP Collector Current-Peak -12 A IB B Base Current-Continuous -0.3 A Collector Power Dissipation @ Ta=25℃ 2 PC Collector Power Dissipation @ TC=25℃ 62.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BD646
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -12mA B -2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -5A; IB= -50mA B -2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -50mA B -3.0 V VBE(on) Base-Emitter On Voltage IC= -3A ; VCE= -3V -2.5 V VCB= -60V; IE= 0 -0.2 ICBO Collector Cutoff Current VCB= -40V; IE= 0; TC= 150℃ -2.0 mA ICEO Collector Cutoff Current VCE= -30V; IB= 0 B -0.5 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 mA hFE DC Current Gain IC= -3A ; VCE= -3V 750 isc Website：www.iscsemi.cn 2