BD516 MOTOROLA | Alldatasheet
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ee ‘ MOTOROLA SC {XSTRS/R FF 4b De Pfeae7ess ggaokos 1 | [ 6367254 MOTOROLA SC (XSTRS/R F) . 96D 80605 aly | : MOTOROLA BD516 | = SEMICONDUCTOR EEE BD518 |/- : ; TECHNICAL DATA BD520 ' . PNP SILICON ANNULAR * | AMPLIFIER TRANSISTORS i PNP SILICON ANNULAR 45 - 60 - 80 VOLTS : AMPLIFIER TRANSISTORS _ 10 WATTS ... designed for general-purpose, high-voltage amplifier and driver
applications
‘e High Collector-Emitter Breakdown Voltage — BVcEp = 45 Ve (Min) @ Ic = 1 mAdc — BDBI6
60 Vdc (Min) @ ic = 1 mAdc — BD518
80 Vde (Min) @ I¢ = 1 mAdc — BD520
‘e High Power Dissipation — Pp =10W@T.= 25°C © ) ‘¢ Complements to BD515, BD517, BDS19 Vi E . a) EU «2 Be is (1) Standard package: 8516, 518, 520 ) Tablermedortetmouning BDSI6:1 S184, ‘Alto avaiable with leads formed to TO-6 con- ‘guration 80S16-6, $18-5, 620-5 on MAXIMUM RATINGS rey a a jew on [eomarsonvoraw Yen [| | ve re) [Eminterate Vote | Veg | 40 | ee : ! ye 3 é [Gatenar caren centavos [te [98 | P “Total Device Dusipation @ Ta = 25°C Watt tr | 18 fon Derate above 25°C m/c, iad Total Device Dissipation @T¢ = 25°C Pp 10 Wars | TP Derate sbove 25°C 80 mwPc LL, <\\ Operating and Storage Junction TaTete % : tt <CJ7. Temperature Range Tr THERMAL CHARACTERISTICS cal [charters svete [nit] thee : [iemai Rance tnevontoGam tye |__| Pew] Barta at cA tee {A dunensions in maenetrs Goltector connected tome \\ CASE 152 ' 3-339 oo he
MOTOROLA SC {XSTRS/R FY ab DE
6367254 MOTOROLA SO ¢xé SES TT Sap ‘ez -
ve . LA SC (XSTRS/R F) . 86D 80606 D_. i BD516, BD518, BD520 - 7 7-33-77 ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) | . OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage BD5T6 BVcEO a de (ig = 1.0 mAdc, Ig = 0) Bo518 80 Ter Base Breakdown Vahage Beso Vie (ig = 100 Adc, I¢ = 0) Totiecior Cool Curent wade Veg ~ 30Vde. tg" 0) 80516 100 (Weg = 40 Vde, Ig = 0) BD518 100 (Vc = 60 Vde, Ig = 0) 80520 100 ON CHARACTERISTICS : DC Cunear CaMTT} Fe (ig =10 mAdc, Veg = 20 Vdc) 150 (ig = 150 mAdc, Veg = 2.0 Vdc) . 130 (ig = 500 mAde, Veg = 2.0 Vdc) 80 H Catecion Emer Sourav Votage GT Tekin We | (Ig = 500 mAdc, Ig = 50 mAdc) } (Ug = 500 made. Ig = 25 mAdc) 5 Base-Emiter On Voltage (1) VBE(on) Voc (ig -800 mAdc. Veg 20 Vde) SMALL-SIGNAL CHARACTERISTICS {Ig = 200 mAdc, Veg = 5.0 Vde, f= 100 MHz) : Ouput Capactance (Vog = 10 Vdc, Ip =0,1= 100 kHz) {oe Faas Wan SSO Ba FST FR FIGURE 1— DC CURRENT GAIN FIGURE 2--"ON” VOLTAGES = 1 Fee HFFA 1 Te thie Ht er re y Ae ert EI TTT ANT canal eT HH Bette} AN pee rH (EEE Bef SC $A § Co er Fr ? : HE” Hp a ' aA TTT TT) epee TT re ‘ ie a ae qe Lad FIGURE 3— DC SAFE OPERATING AREA FIGURE 4— CURRENT-GAIN-BANDWIDTH PRODUCT mm N ooo LI ih Sess 1 ase PUI CT pe Bae be I ST Bar teste |S HTT Be tt 5 teetewenns V 2 Ae S [SS ae ae Soe 2 cee cs Gs 8 es eo . a cr ld ===? ==: Fa St es Boose ge 4 h Bos —t Sees eeseet Tirta vari Fin | Cc TN | “PASS Hae He La a ae oe | ‘There are two limitations on the power handling sbilty of » The dota of Figure 3 is based on Ty (pk) = 180°C, T¢ 8 vanable tvansistor: junction temperature and secondary breakdown. Safe depending on conditions At figh cate temperstures, thermal ‘operating area curves indicate i¢--Vce limits of the transistor that limitations will reduce the power that can be handled to values tmust be observed for ralable operation, Te. the trenuator must. less than the tations imposed by secondary breakdown fot be subjected to greater dissipation than the cuwves indicate 3-340 i