BD515 MOTOROLA | Alldatasheet
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HOTOROLE-SCANSTRSTR FF CtCSs~“‘s~Ss*~ES:C‘ i CW 4 ooaobo3 8 ff MOTOROLA SC {XSTRS/R FT 4b DE jb3b725 6367254 MOTOROLA SC CXSTRS/R F) 96D 80603 D . . . T= 33-07 MOTOROLA BD515 i BD519 NPN SILICON : AMPLIFIER TRANSISTORS | : NPN SILICON ANNULAR 45 - 60 - 80 VOLTS i : AMPLIFIER TRANSISTORS 10 WATTS : . .. designed for general-purpose, high-voltage amplifier and driver applications. ‘@ High Collector-Emitter Breakdown Voltage — 8VcE9 = 45 Vde (Min) @ Ic = 1 mAdc — BD515
60 Vde (Min) @ Ic = 1 mAdc — BD517
80 Vdc (Min) @ Ic = 1 mAdc — BD519
‘@ High Power Dissipation — Pp = 10 W @T¢ = 25°C r Complements to BD516, 8D518, 80520 Wi La aT) EMO a Be By (0) Standord package 80816. 817.519 2} Tas tomed for tat mounting BOSS % 517-1, bet ‘iso avaiable wth leads formed to TO:6 con- fawaton BDSIS 5, 817-8 18:5 MAXIMUM RATINGS > 4 . 1 [Rating TT Sree "Ja16 [60517 [e510 [Unie] a mM [ Gotectoremiter Voltage | Vee | 48 [60 [80] vee | Nie [CotestorBase Vorge | vow | 48 [60 | 80 | vec | } eS [EmerGate Vortngy | Yew | —— 40 vee | a a Caliecior Garren = Continous [ep = 0 ae] on ‘Total Device Disipation © Ta = 26°C > Wate ar ton ‘Total Device Dusipation @T¢ = 750C 10 Ware pie remorse] aed | Pima [mT ee | | SU . cu - THERMAL CHARACTERISTICS . Sa [eharacteriie OT Srmbot Tmax [unit | tte [Thermal Resistence, unctiontoCae [eye 28 | ow _ | oe Phar [Thermal Revistenee Junction t@Ambent [ea [126 | ecm _ He [At dimensions rlimeters Seitecor connectes : case 152 3-337 |
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f ‘254 MOTOROLA SC ¢XSTRS/R F) 96D 80604 : BD515, BD517, BD519 7-33-07 i : : ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) ! ° [_ Gharacteristic TT Svmbot Tein tye ax [unit : j OFF CHARACTERISTICS i Collector-Emitter Breakdown Voltage ‘BDETS 45 vac i} (ig ~ 1.0 made. tg = 0) 80517 ee i : ‘Emuter-Base Breakdown Voltage 8VE80 = vae (ig = 100 Ade, Ig = 0) otlecir Cutt Coment (Veg = 30 Vde, Ig = 0) BD51S 100 t (Wop =40 Vdc, Ie = 0) 80517 100 ' (cp = 60 Vee, Ig = 0) 80519 100 ON CHARACTERISTICS : DC Current Gain (1) Fre {ig 10 mAdc, Veg = 2.0 Ve) (ig. 2150 mAde, Veg = 2.0 Vde) (ig = 800 mAdc, Veg = 2.0 Vdc) Cotlecior-Emiter Saturation Vohage (1b Veen Wee {lg = 500 mAdc, 1g = 50 mAdc) 018, {ig = 500 mAdc, ig = 25 mAdo) 024 Base-Emitter On Voltage (1) Vee(on) 074 vac (ig * 500 mAde, Veg ~ 2.0 Vdc) ° SMALL-SIGNAL CHARACTERISTICS. Current-Gain-- Bandwidth Product e {ig * 200 mAdc. Veg = 5.0 Vde. f= 100 MHz) ‘Output Capacitance: (Wop © 10 Vdc, Ip = 0.1 = 100 kHz) CO Poo We SB See 3 FIGURE 1— TYPICAL DC CURRENT GAIN FIGURE 2— “SATURATION” AND “ON” VOLTAGES 5 " qo Coo ooo welt Ee wo Hil oy A —H 2 CN er | : Hy beet . a Ut i Pee et EE Fi seis 2 On cc ce = Co i > TI nT) : 0 TT omecnss pt] eH TT TT Et (SS | FIGURE 3— DC SAFE OPERATING AREA FIGURE 4— CURRENT-GAIN — BANDWIDTH PRODUCT pel ? “CUT Cerra Se) eS ) Seat ear TT \\ 2S] ay, rl A on BSE z i eee Nt PL TT INT 8 of SIS beauty KI Eee Ce rereee eters ere ea Hd eet nol tr] eee en Come Ee eeaerenvega ENT 3 “Oat or 3 2 He
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eof CUTAN & lui’ TET TTT There ore two lmtations on the power handing ability of 2 The dta of Figue 3isbosed on Ty (ph)" 180°C. Tew vanable tranastor junction temperate and secondary breskGown Safe depending en conaitons, At hgh coeetempertues, thermal Gperatng arn caves muiese lg ge ims of he vonmstortrat Imntations wil reduce the power that can be handled to values 3-338 |