BD505 MOTOROLA | Alldatasheet
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MOTOROLA SC {XSTRS/R FI 46 DE e3b7254 0080599 Oo Tr
6367254 MOTOROLA SC_(XSTRS/R F) 96D 80599 OD |
“T- 33-07 ! i ‘MOTOROLA ; BD505 | - | SEMICONDUCTOR EEE BD507 = : i TECHNICAL DATA BD509 | NPN SILICON AUDIO TRANSISTORS 20 - 30-40 VOLTS NPN SILICON ANNULAR® TRANSISTORS 10 WATTS . designed for complementary symmetry audio circuits @ Excellent Current Gain Linearity — 10 mAdc to 1 0 Ade @ Low Collector-Emitter Saturation Voltage — Voce (sat) = 0-7 Vde (Max) @ Ic = 10 Ade @ Complements to PNP BD506, BD508, BD510 /s Y @ Uniwatt4 Package for Excellent Thermal Properties — q
10 Watt @ Ta = 25°C
10 OWatts @ To = 25°C
(0) SKindard package: 80508, 607, £08 {2) Tabtomed fort mounting, BOSOS 3, 807-1, tos ‘iso’ qalable wth leads fomed te 10-8 con tguavon BOS0S5 607-5. 503°, MAXIMUM RATINGS. ve | [rating sveitot T0608 [80807 [soso0] unis | as u [SeteerorsaseVoruge | vos Te [ef ve | + =) i Collector Current Continuous [ic | —— 20 -—— | Adc | Pn Tora Oonce Onsipation Tq » 25°C 7 ar -| Hon Derate above 25°C 80 | 38 Total Device Owsipation@Tc¢ 250°C Wate 7 pie Temperature Range aan \\ | it THERMAL CHARACTERISTICS to [characte svmeot [mex Tn] tet [ThermatResstence uncwonvo dae [eye [128 [cm _| 88 ret at [arse Reemance,duneton to Anereng Tesn J ra6 | seme aa case 182 3-333 i
OTOROLA SC TKSTRS7R FF 96 DE Besb7es4 oosoboo 2 [ 307254, woToROLA SC CXSTRS/R F) _ 96D 80600 DO ; BD505, BD507, BD509 T-33-07 : ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) | OFF CHARACTERISTICS Clctor-Emiter Breakdown Voge BROS 0 eae eT TET BD509 PSs = (lg = 100 Ade, Ic = 0) Collector Cutoff Current BDS505 100 i (CB = 20, 30, 40 Ve, Ip = 0) beg 100 | ON CHARACTERISTICS | :
1 Curent Gain (1) :
(Ig = 250 mAdc, Vg = 2 Vdc) 160 (ig = 10 Adc, Veg = 2 Vde) 90 (Ig = 1.0 Ade, Ig = 01 Ade) Base-Emitier On Voriage (1) Vee(on) a a ae Vvae SMALL-SIGNAL CHARACTERISTICS : Curent Gar--Gandwedth Product 7 [Rictsommarveensowecr-vommn | TT TT Seow iY Teena Fam Wah = Be Ba Oe HT FIGURE 1 — OC CURRENT GAIN FIGURE 2— “ON voLTAGES “CTT TTT Tr) ° TT TTT TT TT LA Tate POULT Le tH tila EE ano "SE aoe °8 ==. z Po, LL eed 2 ol Lt TT TT) 2 os tT i ieee TT
2 LT) CO = EEO Trin
H Cail LET Sf LE Et) Se Nee i soos eee oe ee reas os ' » EEE COT eso ATi ; {ty tHE Pari —aemeessi=—=—s <I 3 eo op eet rr TT) z a a a a a) a a Xe eOLLECTOR CREM Ha te outeet0n CURRENT oa FIGURE 3 OC SAFE OPERATING AREA ; i a 0 ge PME tT
5 SEES “a
A os es | There are two limtations on the power handing ability of 5 os. a ‘wansistor junction temperature and secondary breakdown Sate
2 CTT AE TTT NICE} berating area cures indicat eV ce mts ofthe tants tat
§ Cred _eanm must be observed for reliable operation, +e, the transistor must go Ty = 160°C MS not be subjected to greater dissipation than the curves indicate
2 Beem umnae ST
8 ef banned PR +] The data of Figure 31s based on Tyipky = 180°C, Te is vanable
2 Fonianetooreco bas deoending on condone At hgh fase temperatures, arma
7 LEN imtavons wl seduce the power that canbe handle fo values
on sosoe ——} +} less than the limitations imposed by secondary breakdown e300 0 =" wo Vee coL.ecTONenrTER VOLTAGE wmLt 3-334 i a “+ we ee !