BD433 STMICROELECTRONICS | Alldatasheet

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COMPLEMENTARY SILICON POWER TRANSISTORS ■ SGS-THOMSON PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES

DESCRIPTION

The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. The BD433 is especially suitable for use in car-radio output stages. The complementary PNP types are BD434, BD436, and BD438 respectively. INTERNAL SCHEMATIC DIAGRAM June 1997 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD433 BD435 BD437 PNP BD434 BD436 BD438 V CBO Collector-Base Voltage (IE = 0) 22 32 45 V V CES Collector-Emitter Voltage (VBE = 0) 22 32 45 V V CEO Collector-Emitter Voltage (IB = 0) 22 32 45 V V EBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 4 A ICM Collector Peak Current (t ≤ 10 ms) 7 A IB Base Current 1 A P tot Total Dissipation at Tc ≤ 25 oC3 6 W Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC For PNP types voltage and current values are negative. 3 2 SOT-32

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 3.5 100 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) for BD433/434 VCB = 22 V for BD435/436 VCB = 32 V for BD437/438 VCB = 45 V 100 100 100 µ A µ A µ A ICES Collector Cut-off Current (VBE = 0) for BD433/434 VCE = 22 V for BD435/436 VCE = 32 V for BD437/438 VCE = 45 V 100 100 100 µ A µ A µ A IEBO Emitter Cut-off Current (IC = 0) V EB = 5 V 1 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (IB = 0) IC = 100 mA for BD433/434 for BD435/436 for BD437/438 V V V V CE(sat)∗ Collector-Emitter Saturation Voltage IC = 2 A IB = 0.2 A for BD433/434 for BD435/436 for BD437/438 0.2 0.2 0.2 0.5 0.5 0.6 V V V V BE ∗ Base-Emitter Voltage I C = 10 mA VCE = 5 V IC = 2 A VCE = 1 V for BD433/434 for BD435/436 for BD437/438 0.58 1.1 1.1 1.2 V V V V h FE ∗ DC Current Gain I C = 10 mA VCE = 5 V for BD433/434 for BD435/436 for BD437/438 IC = 500 mA VCE = 1 V IC = 2 A VCE = 1 V for BD433/434 for BD435/436 for BD437/438 130 130 130 140 h FE1 /hFE2 ∗ Matched Pair IC = 500 mA V CE = 1 V 1.4 fT Transition frequency I C = 250 mA VCE = 1 V 3 MHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % BD433/434/435/436/437/438

DIM. mm inch A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.445 b 0.7 0.9 0.028 0.035 b1 0.49 0.75 0.019 0.030 C 2.4 2.7 0.040 0.106 c1 1.0 1.3 0.039 0.050 D 15.4 16.0 0.606 0.629 e2 . 2 0 . 0 8 7 e3 4.15 4.65 0.163 0.183 F3 . 8 0 . 1 5 0 G 3 3.2 0.118 0.126 H2 . 5 4 0 . 1 0 0 H2 2.15 0.084 H2 0016114 SOT-32 (TO-126) MECHANICAL DATA BD433/434/435/436/437/438

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . . . BD433/434/435/436/437/438