BD437 FS | Alldatasheet

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Technical content

  1. 04. 27 1/2 SEMICO NDUCTOR TECH NICAL DATA BD433/435/437 Revision No : 0

1 EMITTER

2 COLLECTOR

3 BASE

A B DIM MILLIMETERS

8.3 MAXA

B 11.3±0.3 C C 4.15 TYP D D 3.2±0.2 E E 2.0±0.2 F F 2.8±0.1 G 3.2±0.1 G H H 1.27±0.1 I I 1.40±0.1K K 15.5±0.2 L L 0.76±0.1 M M 2.28 TYP O P O 4.56±0.1 P 0.6 MAX 1 2 3 BD433/435/437 TRANSISTOR (NPN)

FEATURES

Amplifier and Switching Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage B D433 BD435 BD437 V VCEO Collector-Emitter Voltage BD433 BD435 BD437 V VEBO Emitter-Base Voltage 5 V IC Collector Current –Continuous 4 A PC Collector Power Dissipation 1.25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Paramet er Symbol Test conditions Min Typ Max U nit Collector-base breakdown voltage V(BR)CBO BD433 IC=100μA,IE=0 BD435 BD437 V Collector-emitter breakdown voltage VCE(SUS) (1) BD433 IC=100mA,IB=0 BD435 BD437 V Emitter-base breakdown voltage V(BR)EBO I E=100μA,IC V 5 0 = Collector cut-off current ICBO VCB=22V,IE=0 BD433 VCB=32V,IE=0 BD435 VCB=45V,IE=0 BD437 1 μA Collector cut-off current ICEO VCE=22V,IE=0 BD433 VCE=32V,IE=0 BD435 VCE=45V,IE=0 BD437 10 μA Emitter cut-off current IEBO V EB=5V,IE=0 1 μA hFE(1) (1) V CE=1V,IC=500mA 85 hFE(2) (1) VCE=5V,IC=10mA BD433/ BD435 BD437

30 DC current gain

hFE(3) (1) VCE=1V,IC=2A BD43 3/BD435 BD437 Collector-emitter saturation voltage VCE(sat) (1) IC=2A,IB=0.2A BD43 3/BD435 BD437 0.5 0.6 V Base-emitter voltage VBE (1) VCE=1V,IC=2A BD43 3/BD435 BD437 1.1 1.2 V Transition frequency fT V CE=1V,IC=250mA 3 MHz (1)Pulse test.

  1. 04. 27 2/2Revision No : 0 BD433/435/437 e g a t l o V n o i t a r u t a S r e t t i m E - r o t c e l l o C . 2 e r u g i Fn i a G t n e r r u c C D . 1 e r u g i F e c n a t i c a p a C e s a B - r o t c e l l o C . 4 e r u g i Fe g a t l o V n O r e t t i m E - e s a B . 3 e r u g i F g n i t a r e D r e w o P . 6 e r u g i Fa e r A g n i t a r e p O e f a S . 5 e r u g i F 0.01 0.1 1 10 100 100 1000 VCE = 1V hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 0 111 . 0 0.01 0.1 IC = 10 IB VCE(sat)[V], SATURATION VOLTAGE IC[A], COLLECTOR CURRENT 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE = 1V IC[A], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE 0.1 1 10 100 1000 100 1000CCBO(pF), COLLECTOR BASE CAPACITANCE VCB[V], COLLECTOR BASE VOLTAGE 0 0 10 11 0.1 10µs 100µs 1ms10ms BD433 IC MAX. (Pulsed) BD437 BD435 DCIC Max. (Continuous) IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE 0 25 50 75 100 125 150 175 200 PC[W], POWER DISSIPATION TC[ o C], CASE TEMPERATURE Typical Characteristics