BD402N THINKISEMI | Alldatasheet
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Technical content
BD402N/BD403N/BD404N/BD405N/BD406N
40 Ampere Standard Type Negative Block Rectifier Diodes for Automotive Alternators
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/3Rev.10T BLOCK/TO-230/BA/MR/K series /rhombus4/rhombus4/rhombus4/rhombus4/rhombus4 Low leakage /rhombus4/rhombus4/rhombus4/rhombus4/rhombus4 Low forward voltage drop /rhombus4/rhombus4/rhombus4/rhombus4/rhombus4 High current capability /rhombus4/rhombus4/rhombus4/rhombus4/rhombus4 High forward surge current capability Feature: Application: /rhombus4 Block Diode/Alternator Diode with AEC-Q101 Grade Quality /rhombus4 Stack Silicon Diffused Diode alternative /rhombus4 Special for Automotive AC Alternator rectifier application /rhombus4/rhombus4/rhombus4/rhombus4/rhombus4 Technology: Latest Glass Passivation Pellet/Cu Clip Bonding /rhombus4/rhombus4/rhombus4/rhombus4/rhombus4 Case: Vacuum soldered/sintered temperature < 260 /rhombus4/rhombus4/rhombus4/rhombus4/rhombus4 Cathode Polarity: As marked on body /rhombus4/rhombus4/rhombus4/rhombus4/rhombus4 Lead: Plated lead, solderable per MIL-STD-202E method 208C /rhombus4/rhombus4/rhombus4/rhombus4/rhombus4 Mounting: BLOCK/TO-230/BA/MR/K series package type Mechanical Data: Case Lead Suffix:"P" Positive Suffix:"N" Negative BD406P Lead Case MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
- Ratings at 25℃ ambient temperature unless otherwise specified
- Single Phase, half wave, 60Hz, resistive or inductive load
- For capacitive load derate current by 20% SYMBOLS BD402N BD403N BD404N BD405N BD406N UNIT Maximum Repetitive Peak Reverse V oltage V RRM 200 300 400 500 600 V olts Maximum RMS Voltage V RMS 140 210 280 350 420 V olts Maximum DC Blocking V oltage V DC 200 300 400 500 600 V olts Maximum Average Forward Rectified Current, At T C = 105 I o Amps Peak Forward Surge Current 8.3mS single half sine wave superimposed on rated load (JEDEC method) I FSM 500 Amps Rating for fusing (t<8.3ms) I t 1037 A S Maximum Instantaneous Forward V oltage Drop at 100A V F
1.10 V olts
I R 5.0 450 µA Typical Thermal Resistance R θJL 1.0 Operating and Storage Temperature Rang T T STG (-65 to +175) NOTES: 1.Enough heatsink must be considered in application. ℃/W Maximum DC Reverse Current at Rated TA=25℃ DC Blocking Voltage TA=100℃ BD405P BD404P BD403P BD402P BD406N BD405N BD404N BD403N BD402N
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/3Rev.10T RATINGS AND CHARACTERISTIC CURVES BD402N thru BD406N F1G.2 MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT F1G.1 TYPICAL FORWARD CURRENT DERATING GURVE
1 Cycle
CURRENT,(A) 8.3ms Single Half Sine-Wave (JEDEC Method) Tj=Tj max AVERAGE FORWARD CURRENT, (A) AMBIENT TEMPERATURE, ()℃ 125100 150 1757550250 Single Phase Half Wave 60Hz Resistive or Inductive Load 0.375″(9.5mm) Lead Length 500 F1G.3 TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT, (A) INSTANTANEOUS FORWARD VOLTAGE,(V) 1000 100 1.0 0.1 T1=25℃ PULSE WIDTH=300μS 1%DUTY CYCLE 504030200 SQUARE WAVE DC AVERAGE POWER DISSIPATION (W) AVERAGE FORWARD CURRENT, (A) F1G.4 FORWARD ROWER DISSIPATION BD402N thru BD406N
BLOCK/TO-230/BA/MR/K Series Package Outline © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 3/3Rev.10T DIM MILLIMETERS 2.0 0.3 1.9 0.3 8.5 0.3 E 10.0 0.3 13.5 0.3 24.0 0.5 10.0 0.3 5.0 0.3 2.5 0.3 5.0 0.3 4.5 0.3 9.0 0.3 1.0 0.3 4.4 0.5 0.6 0.3 DIM MILLIMETERS F G H T A1D3 EF G D1TH +_ +_ BD402N thru BD406N