BD315 MOTOROLA | Alldatasheet
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MOTOROLA SC {XSTRS/R F i DE Bfe3s7254 oososso a : 7° 33°23 | MOTOROLA BD315, BD3 ! m= SEMICONDUCTOR sue »BD316 iy , i TECHNICAL DATA PNP BD317, BD318 | . COMPLEMENTARY SILICON
16 AMPERE
. HIGH-POWER TRANSISTORS COMPLEMENTARY SILICON | _- designed fr Nigh qualiy amplifies operating up to 100 Wats into POWER TRANSISTORS sche load with BD315, BD316 and into 8 ohm load with BD317, i - . 80-100 VOLTS @ High DC Current Gain . 200 WATTS @ Excellent Safe Operating Area @ High Current Gain — Bandwidth Product — Typical _ fr = 20 MHz@le = 100A MAXIMUM RATINGS So, ee ce [Govecroreniver vow | Voeo | 60 [too [vee | [Goteciorsoe voto | ven [ee [veo | vac _| [[EmiverBerevowoge | Mew [70 [ve | were Pepe |) peta [save cure Gontraaie | we | so | _awe_| u Total Device Dissipation @ Tq = 25°C Wats r Derate above 25°C wee ! ° «
1 THERMAL CHARACTERISTICS 2
t FIGURE 1 — POWER DERATING SNe ease "TIN TLLLLILLI cast Cacteron“SIom-0: so Eww PT INS Prey eLITIXNE TTT TI [om fo Ln] | g(t] PAE oT TI Lal tent tase € IN {0 foss | ros | 0038 | 0043} : B.-L TTT PT NET He tear-hieetrirt HH eT TT TT TTT NG Sais merseriiery i LETT? TT tt N Htietie reset | 0 2 40 6 8 100 120 40 180 180 200 Cay tes T= Tirso} ! Te, rereeaTune 1 Sree . 3-324 i
MOTOROLA SC {XSTRS/R Ft 96 DE 6367254 0080591 5 + BD315, BD316, BD317, BD318 : - - jo T233-15__ F3BS93 | * ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) i Collector-Erltier Sustaining Voltage (1) le = 200 mado, ly = 0) 20315, 80316 D317, BOSS Collector-Bave Cutoff Current ‘exo Wea = Rated Vew, le = 0) Emitter-Base Cutoft Current (ae = 7.0 Vdc, le = 0) DC Current Gain ‘ Je = 5.0 Ade, Ver = 40 Véo 80317, 80318 Je 8.0 Ado, Vee = 40 Vdc 0015, 20016 Ie = 10 Ade, Vex = 4.0 Vide. All Types Collector-Emitier Saturation Voltage te = 80 Ado, ly = 08 Ade ‘Base-Emiter Saturation Voltage le = 8.0 Adc, ly = 08 Adc Base-Emitter On Voltage Mle = 8.0 Ade, Veg = 2.0 Vde) ‘Current-Gain—Bandwidth Product (2) {ic = 1.0 Ade, Vee = 20 VAC, tas = 08 MHZ) (1) Pulse Test: Putso Width < 300 x8, Duly Cycle > 2.0%. Beate, eS FIGURE 2 — ACTIVE REGION SAFE OPERATING AREA ” Sey . fe Na ‘There are two limitations on the power handling ablty of @ : === ee transistor: average junction temperature and second. break- 2 = ed down Sale operating area curves indicate le — Vee limits of the 5 aoe tN . Iransisior that must be observed for reliable operation, Le., the Bsa Sean teactom cated FTTH arm be its fo entropion Me 5 ScRaowome wine umite . 3 20}— > = The data. of Figure 2 Is based on Ty = 200°C: Te Is 5 5 jTenuaer arene esac) versie depending on conators. Second eséom pase Bot bil bt eed dp Timi ave watt tor duty eyes to ie provged Ty 200°C. Sh 1 ESe Cunves Aer stow ey At high ase temperatures, thermal limitations will reduce the gd aes ee oe ee ees os ses sas] power that can be handled to values less than the limitations oo Fett ‘i imposed by second breakdown. (See AN-415). - mel 03 18 AY ot TTT | eo stv, are BH io 30 80 70 «0D 10 ce. COLLECTOR EMITTER VOLTAGE VOLTS) 3-325 :
pie oe a . a MOTOROLA SC Tn {XSTRS/R FF 96 DE Bfe3e7254 oososse 2 Tr SS ee a 367254 MOTOROLA sc CXSTRS/R FD . $6D 80592 D 7 | i BD315, BD316, BD317, BD318 . . T -3 2 -/5 i T7339 -15 __ | T- 33-3 PNP DEVICES NPN DEVICES i . BD316 and BD318 BD315 and BD317 | FIGURE 3 — DC CURRENT GAIN: | Sacer e ae i “See | SESS | : ESSERE] |; .pseeedsS ae | Ee ee
8 SS 3 PRR
@ FEL LSS) | 2 SES = a A Oe ra a 0 oS * (J TS 4 | Sa SS SSS FIGURE 4 — “ON” VOLTAGES: “7ST ‘Ta SOLOS Cee | SCC Coe CCC | “CC EHC! | ga CoC ee ; ES COCUMI Crh) ) Ss MCC a git te | ge
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% theese COC COE NE ELL C Herr Eee can Hct (Coen Eee TT 1] Cee eT TT 3-326 |