BD311 MOTOROLA | Alldatasheet
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MOTOROLA SC {XSTRS/R Ft 96 DE Besb7e54 onsosa? 3 ff ~ 6367254 MOTOROLA SC (XSTRS/R F) _ 96D 80587 DT~33-13 T- 33-23 i NPN ! MOTOROLA BD311 = SEMICONDUCTOR sea PNP = TECHNICAL DATA ! BD312 COMPLEMENTARY SILICON :
10 AMPERE :
HIGH-POWER TRANSISTORS. COMPLEMENTARY SILICON POWER TRANSISTORS +. designed for high quality amplifiers operating up to 60 Watts
60 VOLTS
into 4 ohm losd. 115 WATTS @ High DC Current Gain ® Excellent Safe Operating Area @ High Current Gain — Bandwidth Product — Typical fT = 4.0 MHz @1¢=0.5A MAXIMUM RATINGS a | eriontiervornw | vero [| ver] ["otecortie veinoe | Veg | 60] Ver] [_ Emitte-Bare vottoge ew [8 | vee | wore Le Te | ; rr a ves Dipaion @ TG = 75™ i : | Towwaoesce | | cam | wre | ‘Operating and Storage Junction le THERMAL CHARACTERISTICS 4 “x fe = Tia ais dion wom tae | 1s | ren] ecm ry iis a # FIOURE 1 ~ POWER DERATING | ‘CIN TT Tj ra att INET TT tt fou : . -LETN TTT ey at 8 ce 4 ete, ETT APE ET Hf ow: a a # ww stirrer? ty re 9 % ot] TT tt TNT & ui; { [ fy yy yy INT ror en PO Dimensions in millimeters 0 2 40 60 «(80 100 120 «40 16D 180 200 (Cokester connected te cose Te Tewenarune el case tt TO3 3-321
MOTOROLA SC {XSTRS/R FF 9b ODE | eer ggsosaa 5s | Poach *s - - : 'BD311 NPN, BD312 PNP 7-33 / . ELECTIRCAL CHARACTERISTICS® (Tc = 26 °C unless otherwise noted) | ee | (OFF CHARACTERISTICS i Colector Emitter Sutaling Veloge™ vee i (ig 200 mAde, 1g = 0) { TotectarBeve Guta Curent (Vop = Rated Veg, le = 0) Trtter Base Cutoff Currant (Vge~ 7.0 Vee, Ic = 0) ON CHARACTERISTICS' i DG Garant Gain {ic 5.0 Vee, Vcg = 4.0 Vée) Lig = 10 Ade, Vog = 4.0 Vée) Colter Emitter Sataaton VoTg® Vetien ve {igs 80 Ade, ig = 08 Ade | Base-Emitter Saturation Voltege VBE(sat) 7 {ig 80 Ade, 1g = 0.8 Ade) Bae-Grtter On Volone Vee lig = 8.0 Ade, Veg = 4.0 Vde) DYNAMIC CHARACTERISTICS’ ‘Currant-Gain ~ Bandwidth Product” a {ig 08 Ade, Veg = 10 Ve, ft = 1.0 Me) ‘SECOND BREAKDOWN Second Breakdown Callector Guent . (vee 38 Vee, t= 08 vec.) 296 (VCE = 80 Vde, t = 0.6 sec.) 0.60 * Pulse test: Pulse width < 300 us, Duty Cycle > 2% 2 t= Ihe frost a | FIGURE 2 — ACTIVE REGION SAFE OPERATING AREA \\ oe je There_are two limitations on the powar handling silty of # : Ly Slee transistor: average junction temperature and second breakdown. A cy] Beier: go ET Set cere Rt arta thane Shelia ===. === tes tranator mut mot be subjected fo greater duspation tha he Se es ee Second breakdown pulse mits are vid for duty eyels to 10%. 5 ttt tt ts} Pyrom tH “so patents eval for dary eveento BESET ax th cate sporty, thermal lian may edie the
5 Soe Se Eee ee
an ee) Ti TTT . Hd ee ee Z or singe pulse) ====s5 8 os + + +] + J a oy EEE EH ‘ow rr oe couecron hirren vourac wotrs! 3-322
en et en ; MOTOROLA SC {XSTRS/R Ft 96 DE Bese72su oososas 7 |" §367254 MOTOROLA SC (XSTRS/R F) 96D B08 | “" “8D311 NPN, BD312 PNP T-33-/2? : —_ | : 7 33° 33> | . “ ‘ a now oevies ; BD312 BD311 . . FIGURE 3 — DC CURRENT GAIN. . a ™ SS on Ed ACESS el) aT DSSS SESH gett CC : oe oe oS Fy 2 Pe ASS SS : . Es i= Saas | i Sat a es of} LB oe on . oT ETT TT TT ee ae aaa SE i eo.Feron conte went 2 couseron tonne i rioune 4 "ow" vouTAgESs Eee THA li Cae TT TT LATHE HHH Vy wT é CO | e LT 2 aa CT A 2 wECOTTIETTe| s LI Zant), 4 ela Po sIIRSerrT CM) § 4 tamebe tae Tre seer 4 4 i Fyenecut +1 at | ot TI l| Ee IT] ul — ee lie Er eeemee berry “tte IE eer tr cee CELT ee ee 1 oF a 70 30 «50 70 10 a? 03 05 OF 1 7 Sy 7 20 ‘COLLECTOR CURRENT (AMPERES) ‘e,COLLECTOR CURRENT (AMP) 3-323 i