BD034_15 SECOS | Alldatasheet
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PNP General Purpose Transistor 28-Jan-2014 Rev. A Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen and lead free
FEATURES
/circle6 High Current /circle6 High Transition Frequency CLASSIFICATION OF h FE Product-Rank BD034-R BD034-S BD034-T Range 100~200 140~280 200~400 ABSOLUTE MAXIMUM RATINGS (T A=25° C unless otherwise specified) Parameter Symbol Ratings Unit Collector - Base Voltage V CBO -110 V Collector - Emitter Voltage V CEO -95 V Emitter - Base Voltage V EBO -7 V Collector Current -Continuous I C -2.5 A Collector Power Dissipation P C 1.25 W Maximum Junction to Ambient R θJA 100 ° C / W Junction, Storage Temperature T J, T STG 150, -55 ~ 150 ° C ELECTRICAL CHARACTERISTICS (TA=25° C unless otherwise specified) Parameter Symbol Min. Typ . Max. Unit Test Conditions Collector - Base Breakdown Voltage V(BR)CBO -110 - - V I C = -0.1mA, IE=0 Collector-emitter sustaining voltage 1 V CEO(SUS) -95 - - V I C = -10mA, IB=0 Emitter - Base Breakdown Voltage V (BR)EBO -7 - - V I C =0, I E= -0.1mA Collector Cut - Off Current I CBO - - -1 µA V CB = -100V, I E= 0 Emitter Cut-Off Current I EBO - - -1 µA V EB = -5V, IC = 0 100 - 400 V CE = -2V, IC = -100mA DC Current Gain 1 h FE 40 - - VCE = -2V, I C = -1.5mA Collector - Emitter Saturation Voltage 1 VCE(sat) - - -0.5 V I C = -2A, IB = -200mA Base – Emitter Voltage 1 V BE - - -1 V V CE = -5V, IC = -500mA Transition frequency f T 3 - - MHz V CE = -1V, IC = -250mA, f=1MHz TO-126 11 11 Emitter 22 22 Collector 33 33 Base C D B A E N F L G K J H M A 7.40 7.80 H 1.10 1.50 B 2.50 2.90 J 0.45 0.60 C 10.60 11.00 K 0.66 0.86 D 15.30 15.70 L 2.10 2.30 E 3.70 3.90 M 1.17 1.37 F 3.90 4.10 N 3.00 3.20 G 2.29 TYP.