BAY82 FAIRCHILD | Alldatasheet
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. jae SEMICONDUCTOR ay DEB syese74 ooe7299 3 i . poo 3469674 FAIRCHILD SEMICONDUCTOR : 84D 27299 Dm ! FAIRCHILD BAY S2/1N4244 T.0 30% a - | A Schlumberger Company tee . . ! Ultra Fast Switching Diodes a 1N4244 DO-7 ABSOLUTE MAXIMUM RATINGS (Note 1) 1N4376 DO-7 Temperatures 2 Storage Temperature Range 65°C to +200°C. Maximum Junction Operating Temperature +175°C Lead Temperature +260°C "Power Dissipation (Note 2) 7 . Maximum Total Power Dissipation at 25°C Ambient 260 mW Linear Power Derating Factor (from 25°C) 1.67 mW/°C Maximum Voltage and Currents wiv Working Inverse Voltage 10 V (12 V BAY82) . A lo Average Rectified Current 50 mA
1 Ip Continuous Forward Current 150 mA
it Peak Repetitive Forward Current 150 mA iffeurge) Peak Forward Surge Current Pulse Width = 1s 260 mA | ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) : or [saver | wazea | 1waave__| TEST CONDITIONS SYMGOL] CHARACTERISTIC [aan Tene [ane [wax | san [ax | Ve Forward Voltage 0,90 | 1.35 0.9 | 1.10 | Vv | ip=60mA 0.80 | 1.00 0.81 | 0.95 v Ip = 20 mA 0.41 | 0.53 0.42 | 0.50 | V | Ips 10HA ig Reverse Current 100 100 | nA | VR=10V 100 100 pA Vr = 10V, Ta = 150°C 100 nA | Vaet2V . 50 uA | Va = 12V, Ta = 100°C 250 nA | Va=i6V ter Reverse Recovery 760 750 iy = Ip = 10 mA Time (Note 3) RL = 1002 iors NOTES ratings are lntng values above which he sccesbity ofthe diode maybe impr. Foaeee ng ae tt agar shoud be coneued on applaton vavng pulsed or low Gty-ycte operation.
5 Recovery toi; LOMA
4: For prodect ely characte curva, rte to Chapter 4,09. SS 3-18 : > bi4