BAY6642 INFINEON | Alldatasheet
Document overview
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Technical content
HiRel Silicon Switching Diode Target datasheet
- For high-speed switching applications
- Covers 1N6639 1N6643 Type Marking Pin Configuration Package BAY6642 - 1 Anode 2 Cathode HSL2-1808 Maximum Ratings at TA=25°C; unless otherwise specified Parameter Symbol Values Unit Working peak reverse voltage V RWM 75 V Average output rectified current 1) IO 300 mA Forward surge current, t ≤ 10ms I FSM 2.5 A Junction temperature T j 175 °C Operating temperature range T op -65...+175 °C Storage temperature range T stg -65...+175 °C Thermal Resistance Junction to soldering point Rth JS Typ. 100 K/W 1) For TA > 25 °C the derating of IO has to be considered. Nomograms will be available on request.
Electrical Characteristics
at TA=25°C; unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Breakdown voltage, IR = -10 µA V (BR) 100 - - V Reverse current VR = 75 V VR = 75 V, TA = 150°C IR - - 0.5 100 µA µA D.C. Forward voltage I F = 1 mA IF = 10 mA IF = 100 mA IF = 500 mA VF 0.62 0.80 0.92 1.20 V V V V AC Characteristics Total capacitance, VR = 0V, f = 1 MHz C T - - 2.5 pF Reverse recovery time IF = 10 mA, IR = 10 mA measured at IR = 2 mA, RL = 100 Ω trr - 4 - ns Forward recovery time, IF = 200 mA t fr - - 10 ns Symbol A B C D r1
81726 München, Germany
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