BAX16 FAIRCHILD | Alldatasheet
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“FAIRCHILD SEMICONDUCTOR ay peBpavese7y oozes | ; 3469674 FAIRCHILD SEMICONDUCTOR Oe “84D 272947 °~D, Lo H ee oO, AX1G6.2——C“Ci‘ TC EIT . } FAIRCHILD © ; ~ BAX16 oo . | Sa oF . General Purpose Industrial Diode - > . |.” ASchlumberger Company . : _ © BV. ,.180 V (MIN) @ 100'uA Te, . PACKAGE . ° © Ip... 100 nA (MAX) @ 150V BAXI6 DO-35 ” ABSOLUTE MAXIMUM RATINGS (Note 1) . Le - : j - Temperatures : : ~ . . Storage Temperature Range 65°C to +200°C 2 . . Maximum Junction Operating Temperature : +176°C ! Lead Temperature : +260°C . : Power Dissipation (Note 2) oe ; : : \\ Maximum Total Power Dissipation at 25°C Ambient 600 mW ae ' Linear Power Derating Factor (from 25°C) _ 3.33 mW/°C Lo . i Maximum Voltage and Currents a : : : : wiv Working Inverse Voltage 160V os oe" . } lo _ Average Rectified Current: . 200 mA . - H IF Continuous Forward Current 500 mA . . : if Peak Repetitive Forward Current - 600 mA itfaurgey) Peak Forward Surge Current : _ Pulse Width,= 18 . 10A. -- 7 Pulse Width’= tus. 40K | - ELECTRICAL CHARACTERISTICS (26°C Ambiont Temperature unless otherwise noted) VE Forward Voltage 16 v IF = 200 mA i . 140] OV Ip = 200 mA, Ta = 176°C . i . : 0.85 v Ig = 10 mA, Ta = 100°C : oss |- Vv Ip=1mA : Ir 100 Vr = 160V - i . 100 Vp = 160 V, Ta =.160°C. : 26 VR=50V Hi 25 VR = 60 V, Ta = 160°C ‘ tee Reverse Recovery Time (Note 3) I = 30 mA, Ip = 30 mA : RL = 1009 . . Qs Stored Charge 700 pc Ip = 10mA, VR =5V : ; . Fy = 6002 sores 4 Thoue ratings ar iiing valves above which he serviceabiity ofthe diode may be impaired. 2: Thene ara sleaay slate ina, The acory shoud be connie on eppcatons tolvngpuved or low dy-eyla operation. cee 3 Recovery tog = SMA. - 4, For product iy cheracteriaic cores reer to Chapter 4, D1. : Sole | 3-13 :