BAX13

BAX13 FAIRCHILD | Alldatasheet

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. FAIRCHILD SEMICONDUCTOR ay Def s4e%n74 go27293 7 | F : | 3469674 -FAIRCHILD SEMICONDUCTOR - 84D 27293) De i FAIRCHILD . . - Renuntenrcony : High Speed Switching Diode 7 © C,..3.0 pF (MAX) PACKAGE © tre. ..4.0 ne (MAX) BAX13 DO-35 i ABSOLUTE MAXIMUM RATINGS (Note 1) H ‘Temperatures : Storage Temperature Range . 65°C to +200°C . : ‘ Maximum Operating Junction Temperature +178°C i Lead Temperature +260°C : . Power Dissipation (Note 2)” . , : | Maximum Total Dissipation at 26°C Ambient 500 mw : . i Linear Derating Factor (from 25°C) * 3.83 mW/°G : Maximum Voltages and Currents - VRRM Ropetitive Peak Reverse Voltage 50V : ' VR Reverse Voltage 50V . fo Average Rectified Current 100 mA f i ip Forward Current 300 mA i it Recurrent Peak Forward Current 400 mA i 'FsM Peak Forward Surge Current ~ - H Pulse Width = 1.08 1.0A | Pulse Width = 1.0 us 4.04 . ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) : Ve Forward Voltage 07 v ip = 2.0mA~ 08 Vv Ip = 10 mA, Ta = 100°C. 1.0 v Ip = 20 mA. . 1.63 v ip = 75 mA. Ip Reverse Current 25 Va = 10V . 10 Vp = 10V, Ta = 160°C

60 Va = 25V

. 200 VR = 50V

25 Vr = 50 V, Ta = 150°C

c Capacitance [ [| 30 | oF | va=0.t=1.0MHe ter Reverse Recovery Time ns lp = 10 mA, V; = 6.0 V, RL = 1000, . Ip = 1.0 mA 1 Theve aings ae ntng valves above wich the srceatiiy of any nda enicondctr device may be ipa. 2: Thewe are steady ate inte. The factory should be coneites on application Invoveg puised or tow duty cycle operations, ~~ 53, For product family cheracteriate carves, rater to Chapter 4, D4. el i i 3-12