BAW156 KEXIN | Alldatasheet
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Technical content
Features
Low leakage current: typ. 3 pA Switching time: typ. 0.8 s Continuous reverse voltage:max. 75 V Repetitive peak reverse voltage:max. 85 V Repetitive peak forward current:max. 500 mA. Absolute Maximum Ratings Ta = 25 Parameter Symbol Conditions Min Max Unit Repetitive peak reverse voltage V RRM 85 V Continuous reverse voltage V R 75 V single diode loaded;note 1 160 double diode loaded; note 1 140 Repetitive peak forward current I FRM 500 mA square wave; Tj =2 5 prior to surge t=1 s 4 t=1m s 1 t=1s 0 . 5 Total power dissipation P tot Tamb 25 ; note 1 250 mW Storage temperature T stg -65 +150 Junction temperature T j 150 thermal resistance from junction to tie-point R th j-t p 360 K/W thermal resistance from junction to ambient R th j-a 500 K/W Note 1. Device mounted on an FR4 printed-circuit board. A mAContinuous forward current I F Non-repetitive peak forward current I FSM 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector Unit: mmSOT-23 0.1+0.05 -0.01
2 www.kexin.com.cn BAW156 Electrical Characteristics Ta = 25 Parameter Symbol Conditions Typ Max Unit IF = 1 mA 900 IF = 10 mA 1000 IF = 50 mA 1100 IF = 150 mA 1250 VR = 75 V 0.003 5 VR =7 5V ;Tj = 150 38 0 Diode capacitance C d f=1M H z ;VR =0 3 p F when switched from IF =1 0m At oIR =1 0m A ; RL = 100 ;measured at IR =1m A ; nA mV trrReverse recovery time 3 s0.8 VFForward voltage IRReverse current Marking Marking JZp