BAW101 INFINEON | Alldatasheet
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BAW101... Silicon Switching Diode
- Electrically insulated high-voltage medium-speed diodes BAW101 /G31 /G44 /G32 /G32 /G33 /G34 /G44 /G31 Type Package Configuration Marking BAW101 SOT143 parallel JPs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage VR 300 V Peak reverse voltage VRM 300 Forward current IF 250 mA Peak forward current IFM 500 Surge forward current, t = 1 µs IFS 4.5 A Total power dissipation TS ≤ 35°C Ptot 350 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) BAW101 RthJS ≤ 330 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance
BAW101... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Breakdown voltage I(BR) = 100 µA V(BR) 300 - - V Reverse current V R = 250 V VR = 250 V, TA = 150 °C IR 0.15 µA Forward voltage I F = 100 mA VF - - 1.3 V AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz CT - 6 - pF Reverse recovery time IF = 10 mA, IR = 10 mA, measured at IR = 1mA, RL = 100 Ω trr - 1 - µs Test circuit for reverse recovery time EHN00019 Ι F D.U.T. Oscillograph Pulse generator: tp = 10µs, D = 0.05, tr = 0.6ns, Ri = 50Ω Oscillograph: R = 50Ω, tr = 0.35ns, C ≤ 1pF
BAW101... Reverse current IR = ƒ (TA) VR = 250V BAW 101 EHB00104 max. typ. Ι R nA 0 50 100 TA ˚C 150 Forward Voltage VF = ƒ (TA) IF = Parameter -40 -20 0 20 40 60 80 100 120 °C 150 TA 0.6 0.65 0.7 0.75 0.8 0.85 0.9 V VF 10mA 100mA Forward current IF = ƒ (VF) TA = 25°C 0 1.0 2.0 BAW 101 EHB00103 A VF V -310 -210 10-1 010 Ι F Forward current IF = ƒ (TS) BAW101 0 15 30 45 60 75 90 105 120 °C 150 TS 100 150 200 mA 300 IF