BAW101 CENTRAL | Alldatasheet
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Technical content
Semiconductor Corp. TM BAW101 DUAL, ISOLATED HIGH VOLTAGE SWITCHING DIODES SOT-143 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR BAW101 type is a Silicon Dual Isolated High Voltage Switching diode designed for surface mount switching applications requiring high voltage capabilities. Marking Code is CJP. MAXIMUM RATINGS (TA=25°C) SYMBOL UNITS Continuous Reverse Voltage V R 300 V Peak Repetitive Reverse Voltage V RRM 300 V Continuous Forward Current I F 200 mA Peak Repetitive Forward Current I FRM 500 mA Forward Surge Current, tp=1 ms I FSM 4500 mA Power Dissipation P D 350 mW Operating and Storage Junction Temperature T J,Tstg -65 to +150 °C Thermal Resistance QJA 357 °C/W ELECTRICAL CHARACTERISTICS PER DIODE (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IR VR =250V 150 nA IR VR =250V, TA=150°C 50 mA BVR IR =100mA 300 V VF IF=100mA 0.9 1.3 V CT VR =0V, f=1.0MHz 5.0 pF trr IF=IR =30mA, Irr=3.0mA, RL=100W 50 ns NEW
LEAD CODE: TOP VIEW All Dimensions in Inches (mm). 1) Cathode 1 2) Cathode 2 3) Anode 2 4) Anode 1