BAW100_15 CENTRAL | Alldatasheet
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DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW100 and BAW100G each consist of two electrically isolated high speed silicon switching diodes packaged in an epoxy molded SOT-143 surface mount case. This device is designed for high speed switching applications. MARKING CODES: BAW100: CJSS BAW100G: CJSG The BAW100G is Halogen Free by design. MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Continuous Reverse Voltage V R 75 V Peak Repetitive Reverse Voltage V RRM 85 V Continuous Forward Current I F 250 mA Peak Repetitive Forward Current I FRM 500 mA Peak Forward Surge Current, tp=1.0ms I FSM 4.0 A Peak Forward Surge Current, tp=1.0ms I FSM 2.0 A Peak Forward Surge Current, tp=1.0s I FSM 1.0 A Power Dissipation P D 350 mW Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS IR V R=25V, TA=150°C 30 μA IR V R=75V 1.0 μA IR V R=75V, TA=150°C 50 μA BVR I R=100μA 85 V VF I F=1.0mA 715 mV VF I F=10mA 855 mV VF I F=50mA 1.00 V VF I F=150mA 1.25 V CT V R=0, f=1.0MHz 2.0 pF trr I F=IR=10mA, RL=100Ω, Rec. to 1.0mA 6.0 ns SOT-143 CASE R4 (20-November 2009) www.centralsemi.com
DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES SOT-143 CASE - MECHANICAL OUTLINE LEAD CODE: 1) ANODE D1 2) ANODE D2 3) CATHODE D2 4) CATHODE D1 MARKING CODES: BAW100: CJSS BAW100G: CJSG PIN CONFIGURATION www.centralsemi.com R4 (20-November 2009)