BAV100 TSC | Alldatasheet

Document overview

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Technical content

Features

— High Voltage Switching Device — Mini Melf package — Surface device type mounting — Hermetically sealed glass — Compression bonded construction — All external surface are corrosion resistant and leads are readily solderable — RoHS compliant — Matte Tin (Sn) lead finish — Color band indicates Negative Polarity Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 o Cambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Maximum Ratings Type Number Symbol Value Units Repetitive Peak Reverse Voltage VRRM 250 V Average Rectified Forward Current IF(AV) 200 mA Non- Repetitive Peak Forward Surge Current Pulse Width =1.0 Second Pulse Width = 1.0 usecond IFSM 1.0 4.0 A Power Dissipation Pd 500 mW Operating and Storage Temperature Range T J, TSTG -65 to + 200 OC

Electrical Characteristics

Type Number Symbol Min Max Units Breakdown Voltage BAV100 IR=100uA BAV101 IR=100uA BAV102 IR=100uA BAV103 IR=100uA B V 120 200 250 V Forward Voltage IF= 100mA V F 1.0 V Peak Reverse Current BAV100 VR=50V BAV101 VR=100V BAV102 VR=150V BAV103 VR=200V IR 100 100 100 100 nA Thermal Resistance, Junction to Ambient RӨJA 350 o C/W Junction Capacitance VR=0, f=1.0MHz Cj - 5.0 pF Reverse Recovery Time (Note) trr - 50 nS Notes: Reverse Recovery Test Conditions: IF=IR=30mA, Irr=3mA, RL=100Ω. Version: A07

RATINGS AND CHARACTERISTIC CURVES (BAV100/101/102/103) Fig. 1 Reverse Current vs. Junction Temperature µ 0 40 80 120 160 0.01 0.1 1000 I - Reverse Current ( A )R Tj - Junction Temperature (°C) 200 100 Scattering Limit VR =V RRM Vishay Semiconductors www.vishay.com Typical Characteristics (Tamb = 25 °C unless otherwise specified) Fig. 2 Forward Current vs. Forward Voltage 0 0.4 0.8 1.2 1.6 0.1 100 1000I - Forward Current ( mA )F VF - Forward Voltage ( V ) 2.0 Scattering Limit Tj =2 5°C Vishay Semiconductors www.vishay.com Typical Characteristics (Tamb = 25 °C unless otherwise specified) Fig. 3 Differential Forward Resistance vs. Forward Current 0.1 1 10 100 1000 r - Differential Forward Resistance ( )f I F - Forward Current ( mA ) 100 Ω Tj =2 5° C