BAV101

BAV101 SEMTECH_ELEC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 2

Technical content

Dated : 22/11/2008 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) BAV101~BAV103 SILICON EPITAXIAL PLANAR DIODES High Voltage General Purpose Diodes Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Repetitive Peak Reverse Voltage BAV101 BAV102 BAV103 V RRM 120 200 250 V Reverse Voltage BAV101 BAV102 BAV103 V R 100 150 200 V Continuous Forward Current I F 250 mA Repetitive Peak Forward Current I FRM 625 mA Non-repetitive Peak Forward Surge Current at t = 100 µs at t = 1 s IFSM 3 1 A Total Power Dissipation P tot 400 mW Thermal Resistance, Junction to Ambient RθJA 300 K/W Junction Temperature T j 175 OC Storage Temperature Range T stg - 65 to + 175 OC Characteristics at Ta = 25 OC Parameter Symbol Max. Unit Forward Voltage a t IF = 100 mA a t IF = 200 mA VF 1.25 V Reverse Current at VR = 100 V at VR = 150 V at VR = 200 V at VR = 100 V, Tj = 150 OC a t VR = 150 V, Tj = 150 OC a t VR = 200 V, Tj = 150 OC BAV101 BAV102 BAV103 BAV101 BAV102 BAV103 I R 100 100 100 100 100 100 nA nA nA µA µA µA Diode Capacitance at f = 1 MHz, VR = 0 Cd 5 pF Reverse Recovery Time at IF = IR = 30 mA, Irr = 3 mA, RL = 100 Ω trr 50 ns

Dated : 22/11/2008 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) BAV101~BAV103