BAV100 PHILIPS | Alldatasheet

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Technical content

Product specification Supersedes data of April 1996

1996 Sep 17

1/3 page (Datasheet) M3D054

1996 Sep 17 2

Philips Semiconductors Product specification General purpose diodes BAV100 to BAV103

FEATURES

  • Small hermetically sealed glass SMD package
  • Switching speed: max. 50 ns
  • General application
  • Continuous reverse voltage: max. 50 V, 100 V, 150 V and 200 V respectively
  • Repetitive peak reverse voltage: max. 60 V, 120 V, 200 V and 250 V respectively
  • Repetitive peak forward current: max. 625 mA.

APPLICATIONS

  • Switching in industrial equipment e.g. oscilloscopes, digital voltmeters and video output stages in colour television.

DESCRIPTION

The BAV100 to BAV103 are switching diodes fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C SMD packages. Fig.1 Simplified outline (SOD80C) and symbol. Cathode indicated by green band. handbook, 4 columns MAM061 ka

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Philips Semiconductors Product specification General purpose diodes BAV100 to BAV103 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage BAV100 − 60 V BAV101 − 120 V BAV102 − 200 V BAV103 − 250 V VR continuous reverse voltage BAV100 − 50 V BAV101 − 100 V BAV102 − 150 V BAV103 − 200 V IF continuous forward current see Fig.2; note 1 − 250 mA IFRM repetitive peak forward current − 625 mA IFSM non-repetitive peak forward current square wave; Tj=2 5°C prior to surge; see Fig.4 t=1 µs − 9A t = 100µs − 3A t=1s − 1A Ptot total power dissipation T amb =2 5°C; note 1 − 400 mW Tstg storage temperature −65 +175 °C Tj junction temperature − 175 °C

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Philips Semiconductors Product specification General purpose diodes BAV100 to BAV103

ELECTRICAL CHARACTERISTICS

Tj=2 5°C; unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage see Fig.3 IF = 100 mA − 1.0 V IF = 200 mA − 1.25 V IR reverse current see Fig.5 BAV100 V R =5 0V − 100 nA VR = 50 V; Tj= 150°C − 100 µA BAV101 V R = 100 V − 100 nA VR = 100 V; Tj= 150°C − 100 µA BAV102 V R = 150 V − 100 nA VR = 150 V; Tj= 150°C − 100 µA BAV103 V R = 200 V − 100 nA VR = 200 V; Tj= 150°C − 100 µA C d diode capacitance f = 1 MHz; V R = 0; see Fig.6 − 5p F trr reverse recovery time when switched from I F = 30 mA to IR = 30 mA; RL = 100Ω ; measured at IR = 3 mA; see Fig.8 − 50 ns SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-tp thermal resistance from junction to tie-point 300 K/W R th j-a thermal resistance from junction to ambient note 1 375 K/W

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Philips Semiconductors Product specification General purpose diodes BAV100 to BAV103 GRAPHICAL DATA Device mounted on an FR4 printed-circuit board. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. handbook, halfpage 0 100 200 300 200 100 MBH278 Tamb (oC) IF (mA) Fig.3 Forward current as a function of forward voltage. handbook, halfpage 012 600 200 400 MBG459 VF (V) IF (mA) (1) (2) (3) (1) Tj= 150°C; typical values. (2) Tj=2 5°C; typical values. (3) Tj=2 5°C; maximum values. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. Based on square wave currents. Tj=2 5°C prior to surge. handbook, full pagewidth MBG703 10 tp (µs)1 IFSM (A) 102 10−1 104102 103

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Philips Semiconductors Product specification General purpose diodes BAV100 to BAV103 Fig.5 Reverse current as a function of junction temperature. handbook, halfpage 0 100 Tj (oC) 200 103 102 10−1 10−2 IR (µA) MGD009 VR =V Rmax . Solid line; maximum values. Dotted line; typical values. Fig.6 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj=2 5°C. handbook, halfpage 01 0 2 0 1.6 1.4 1.0 0.8 1.2 MGD005 VR (V) C d (pF) Fig.7 Maximum permissible continuous reverse voltage as a function of ambient temperature. handbook, halfpage 0 200 300 100 200 MBG700 100 (1) (4) VR (V) Tamb (oC) (2) (3) (1) BAV103. (2) BAV102. (3) BAV101. (4) BAV100.

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Philips Semiconductors Product specification General purpose diodes BAV100 to BAV103 Fig.8 Reverse recovery voltage test circuit and waveforms. handbook, full pagewidth trr (1) IF t output signal tr t tp 10% 90%V R input signal V = V I x RRF S R = 50S Ω IF D.U.T. R = 50i Ω SAMPLING OSCILLOSCOPE MGA881 (1) IR = 1 mA.

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Philips Semiconductors Product specification General purpose diodes BAV100 to BAV103 PACKAGE OUTLINE DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification. Fig.9 SOD80C. Dimensions in mm. handbook, full pagewidth MBA390 - 2 1.60 1.45 3.7 3.3 0.3 0.3 O