BAV100 BILIN | Alldatasheet
Document overview
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Technical content
3.4 +0.3 -0.1 0.4±0.1 φ1 .5±0.1 Cathode indification
FEATURES
◇ Silicon epitaxial planar diode ◇ High speed switching diode ◇ 500 mW power dissipation MECHANICAL DATA ◇ Case: MINI-MELF,glass case ◇ Polarity: Color band denotes cathode ◇ Weight: Approx 0.031 grams Ratings at 25℃,ambient temperature unless otherwise specified. Reverse voltage VR V Repetitive peak reverse voltage VRRM V Forward current I(AV) A Forward surge current tp=1s IFSM A Power dissipation PV mW Thermal resistance junction to ambient RθJA K/W Thermal resistance junction to lead RθJL K/W Junction temperature Tj ℃ Storage temperature range TSTG ℃ Document Number 0268017 1. 250 BLGALAXY ELECTRICAL www.galaxycn.com BL GALAXY ELECTRICAL BAV100---BAV103 VOLTAGE RANGE: 50-200 V CURRENT: 250 mA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.25 350 5001) - 65 --- + 175 BAV102 ABSOLUTE MAXIMUM RATINGS AND THERMAL RESISTANCE Unit 20060 50 150 BAV101 100 120 SMALL SIGNAL SWITCHING DIODE BAV100 1.0 175 500 BAV103 200 MINI-MELF 1) Device mounted on PC board 50mm×50mm×1.6mm .
ELECTRICAL CHARACTERISTICS
Parameter Symbo l Min Typ Max Unit Forward voltage VF --1 V Reverse current - - 100 n A -- 1 5 µ A - - 100 n A -- 1 5 µ A - - 100 n A -- 1 5 µ A - - 100 n A -- 1 5 µ A Breakdown voltage 60 - - V 120 - - V 200 - - V 250 - - V Diode capacitance C D - 1.5 - pF Differential forward resistance rf -5- Ω Reverse recovery time trr - - 50 ns Document Number 0268017 2.BLGALAXY ELECTRICAL VR=50V,TJ=25℃ BAV100 VR=150V,TJ=100℃ BAV102 VR=150V,TJ=25℃ BAV102 VR=50V,TJ=100℃ BAV100 VR=100V,TJ=100℃ BAV101 VR=100V,TJ=25℃ BAV101 Test Conditions IF=100mA VR=200V,TJ=25℃ BAV103 VR=200V,TJ=100℃ BAV103 BAV102 BAV103 I F=IR=30mA,iR=3mA,RL=100Ω www.galaxycn.com IR V(BR) VR=0,f=1MHZ IF=10mA IR=100mA,tp/T=0.01,tp=0.3ms BAV100 BAV101
Forward Current ( mA ) RATINGS AND CHARACTERISTIC CURVES DIFFERENTIAL FORWARD RESISTANCE, REVERSE CURRENT ( µ A ) FORWARD CURRENT ( mA ) BAV100 - - - BAV103 JUNCTION TEMPERTURE ( ) Forward Voltage ( V ) FIG 1. REVERSE CURRENT VS. JUNCTION TEMPERATURE FIG 3. DIFFERENTIAL FORWARD RESISTANCE FIG 2. FORWARD CURRENT VS. FORWARD VOLTAGE BLGALAXY ELECTRICAL www.galaxycn.com Document Number 0268017 3. 0 40 80 120 160 0.01 0.1 1000 200 100 Scattering Limit V R =V RRM 0 0.4 0.8 1.2 1.6 0.1 100 1000 2.0 Scattering Limit Tj=2 5°C VS. FORWARD CURRENT /C0087/C0087/C0087/C0087 0.1 1 10 100 1000 100 Tj=2 5°C