BAV100 DSK | Alldatasheet
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Technical content
3.4 +0.3 -0.1 0.4±0.1 φ1 .5±0.1 Cathode indification
FEATURES
◇ Silicon epitaxial planar diode ◇ High speed switching diode ◇ 500 mW power dissipation MECHANICAL DATA ◇ Case: MINI-MELF,glass case ◇ Polarity: Color band denotes cathode ◇ Weight: Approx 0.031 grams Ratings at 25℃,ambient temperature unless otherwise specified. Reverse voltage V R V Repetitive peak reverse voltage V RRM V Forward current I (AV) A Forward surge current t p =1s I FSM A Power dissipation P V mW Thermal resistance junction to ambient R θJA K/W Thermal resistance junction to lead R θJL K/W Junction temperature T j Storage temperature range T STG 250 BAV100---BAV103 VOLTAGE RANGE: 50-200 V CURRENT: 250 mA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.25 350 500 - 65 --- + 175 BAV102 ABSOLUTE MAXIMUM RATINGS AND THERMAL RESISTANCE Unit 20060 50 150 BAV101 100 120 SMALL SIGNAL SWITCHING DIODES BAV100 1.0 175 500 BAV103 200 MINI-MELF Device mounted on PC board 50mm×50mm×1.6mm . Dimensions in millimeters Diode Semiconductor Korea www.diode.kr
Parameter Symbo l Min Typ Max Unit Forward voltage V F --1 V Reverse current - - 100 n A -- 1 5 µ A - - 100 n A -- 1 5 µ A - - 100 n A -- 1 5 µ A - - 100 n A -- 1 5 µ A Breakdown voltage 60 - - V 120 - - V 200 - - V 250 - - V Diode capacitance C D - 1.5 - pF Differential forward resistance r f - 5 - Ω Reverse recovery time t rr - - 50 ns V R =50V,T J =25℃ BAV100 V R =150V,T J =100℃ BAV102 V R =150V,T J =25℃ BAV102 V R =50V,T J =100℃ BAV100 V R =100V,T J =100℃ BAV101 V R =100V,T J =25℃ BAV101 Test Conditions I F =100mA V R =200V,T J =25℃ BAV103 V R =200V,T J =100℃ BAV103 BAV102 BAV103 I F R =30mA,i R =3mA,R L =100Ω I R V (BR) V R =0,f=1MH Z I F =10mA I R =100mA,t p /T=0.01,t p =0.3ms BAV100 BAV101 www.diode.kr Diode Semiconductor Korea
Forward Current ( mA ) DIFFERENTIAL FORWARD RESISTANCE, REVERSE CURRENT ( µ A ) FORWARD CURRENT ( mA ) BAV100 - - - BAV103 JUNCTION TEMPERTURE ( ) Forward Voltage ( V ) FIG 1. REVERSE CURRENT VS. JUNCTION TEMPERATURE FIG 3. DIFFERENTIAL FORWARD RESISTANCE FIG 2. FORWARD CURRENT VS. FORWARD VOLTAGE 0 40 80 120 160 0.01 0.1 1000 200 100 Scattering Limit V R RRM 0 0.4 0.8 1.2 1.6 0.1 100 1000 2.0 Scattering Limit T j =2 5°C VS. FORWARD CURRENT /C0087/C0087/C0087/C0087 0.1 1 10 100 1000 100 T j =2 5°C www.diode.kr Diode Semiconductor Korea