BAT93 PHILIPS | Alldatasheet
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Technical content
Product specification File under Discrete Semiconductors, SC01
Philips Semiconductors Product specification Schottky barrier diode BAT93 December 1993 2
FEATURES
- Ultra-fast switching speed
- Low forward voltage
- Two-pin SMD package.
DESCRIPTION
Silicon epitaxial Schottky barrier diode with an integrated guard ring for stress protection.Iintended for high speed switching, circuit protection and voltage clamping applications. The diode is encapsulated in a SOD123 SMD plastic package. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MAX. UNIT V R continuous reverse voltage 30 V IF continuous forward current 200 mA VF forward voltage I F = 10 mA 400 mV IR reverse current V R = 25 V 2 µA Tj junction temperature 150 °C C d diode capacitance V R = 1 V 10 pF ka MAM058 Top view Fig.1 Simplified outline (SOD123) and symbol.
Philips Semiconductors Product specification Schottky barrier diode BAT93 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL RESISTANCE Note 1. Printed-circuit board mounting (SOD123 standard conditions). CHARACTERISTICS Tj = 25 °C unless otherwise specified. Note 1. Pulsed test: tp = 300µs;δ = 0.02. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 30 V IF continuous forward current − 200 mA IFRM repetitive peak forward current tp ≤ 1 s;δ≤ 0.5 − 300 mA IFSM non-repetitive peak forward current tp < 10 ms − 600 mA Ptot total power dissipation T amb ≤ 25°C − 250 mW Tstg storage temperature −65 +150 °C Tamb operating ambient temperature −65 +150 °C Tj junction temperature − 150 °C SYMBOL PARAMETER THERMAL RESISTANCE R th j-a from junction to ambient; note 1 500 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage I F = 0.1 mA − 240 mV IF = 1 mA − 320 mV IF = 10 mA − 400 mV IF = 30 mA − 500 mV IF = 100 mA − 800 mV V(BR)R reverse breakdown voltage I R = 10µA3 0 − V IR reverse current V R = 25 V; note 1 − 2 µA C d diode capacitance V R = 1 V; f = 1 MHz − 10 pF trr reverse recovery time when switched from I F = 10 mA to IR = 10 mA; RL = 100Ω ; measured at IR = 1 mA − 5n s
Philips Semiconductors Product specification Schottky barrier diode BAT93 Fig.2 Forward current as a function of forward voltage. dbook, halfpage10 IF VF (V) (mA) 10 1 1.20.80.40 MSA892 (3)(2)(1) (3)(2)(1) (1)Tamb = 125 °C. (2)Tamb = 85 °C. (3)Tamb = 25 °C. Fig.3 Reverse current as a function of reverse voltage. 01 0 2 0 3 0 V (V)R 10 3 IR (µA) 10 2 10 1 (1) (2) (3) MSA893 (1)Tamb = 125 °C. (2)Tamb = 85 °C. (3)Tamb = 25 °C. Fig.4 Diode capacitance as a function of reverse voltage. 01 02 03 0 V (V)R C d (pF) MSA891 Fig.5 Power derating curve. 100 200 300 P tot (mW) MSA894
150750 Tamb ( C)o
Philips Semiconductors Product specification Schottky barrier diode BAT93 PACKAGE OUTLINE Fig.6 SOD123. Dimensions in mm. handbook, full pagewidth /,/,/, /, /, /, /, /, /, /, /, /, /,/,/, 2.85 2.55 3.85 3.55
0.2 M A
A 0.70 0.50 1.7 1.4 0.25 min 1.35 max 0.19 0.12 17 maxo 5 max (2x)o 0.1 max 12 maxo (2x) 12 maxo (2x) (2x) MBA038 - 2 cathode colour band 0.55 0.40
Philips Semiconductors Product specification Schottky barrier diode BAT93 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Semiconductors Product specification Schottky barrier diode BAT93 NOTES
Philips Semiconductors – a worldwide company Argentina: IEROD, Av. Juramento 1991 - 14.B, (1428) Buenos Aires, Tel. (541)786 7633, Fax. (541)786 9367 Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. (02)805 4455, Fax. (02)805 4466 Austria: Triester Str. 64, A-1101 WIEN, P.O. Box 213, Tel. (01)60 101-1236, Fax. (01)60 101-1211 Belgium: Postbus 90050, 5600 PB EINDHOVEN, The Netherlands, Tel. (31)40 783 749, Fax. (31)40 788 399 Brazil: Rua do Rocio 220 - 5th floor, Suite 51, CEP: 04552-000-SÃO PAULO-SP, Brazil. P.O. Box 7383 (01064-970). Tel. (011)829-1166, Fax. (011)829-1849 Canada: INTEGRATED CIRCUITS: Tel. (800)234-7381, Fax. (708)296-8556 DISCRETE SEMICONDUCTORS: 601 Milner Ave, SCARBOROUGH, ONTARIO, M1B 1M8, Tel. (0416)292 5161 ext. 2336, Fax. (0416)292 4477 Chile: Av. Santa Maria 0760, SANTIAGO, Tel. (02)773 816, Fax. (02)777 6730 Tel. (571)217 4609, Fax. (01)217 4549 Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. (032)88 2636, Fax. (031)57 1949 Finland: Sinikalliontie 3, SF-02630 ESPOO, France: 4 rue du Port-aux-Vins, BP317,
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811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. (800)234-7381, Fax. (708)296-8556 DISCRETE SEMICONDUCTORS: 2001 West Blue Heron Blvd., P.O. Box 10330, RIVIERA BEACH, FLORIDA 33404, Tel. (800)447-3762 and (407)881-3200, Fax. (407)881-3300 Uruguay: Coronel Mora 433, MONTEVIDEO, Tel. (02)70-4044, Fax. (02)92 0601 For all other countries apply to:Philips Semiconductors, International Marketing and Sales, Building BAF-1, P.O. Box 218, 5600 MD, EINDHOVEN, The Netherlands, Telex 35000 phtcnl, Fax. +31-40-724825 SCD24 © Philips Electronics N.V. 1993 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 9397 722 40011