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Maximum Ratings and Electrical Characteristics @ T A = 25/c176C unless otherwise specified /c183 /c183 Mechanical Data /c183 A A B C D DO-35 Dim Min Max A 25.40 /c190 B /c190 4.00 C /c190 0.60 D /c190 2.00 All Dimensions in mm Case:JEDEC DO--35,glass case Weight: Approx. 0.13 gram Polarity: Color band denotes cathode end /c183 /c183 For general purpose applications This diodes features very low turn-on voltage and fast switching. This devices are protected voltage, such as electrostatic discharges fast switching and low logic level applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and coupling diodes for by a PN junction guard ring against excessive /c183 Symbols 200 125 Value 50.0 200 500 Continuous reverse voltage Forw ard continuous current @ T A =25 Repetitive peak forw ard current @ tp<1s, <=0.5,T A =25 c-55 ---+ 150 V mA mA mw P tot T J T A Pow er dissipation @ T A =25 UNITS c-55 ---+ 125 V R I F I FRM Junction temperature Ambient operating temperature range Storage temperature range T STG Min. UNITS 50.0 V V V V V V A pF ns V F 300 0.6 0.9 5.0 t rr R θJA @ I F =100mA Leakage current V R =40V Junction capacitance at V R =1V,f=1MHz R everse recovery tim e form I F =10mA to I R =10mA to I R =1mA Max.Typ. Forw ard voltage @ I F =10mA @ I F =30mA 0.365 0.7 I R 0.2 0.3 Reverse breakdow n voltage tested w ith 100 A pulses Symbols V R 0.38 Pulse test tp<300 <2% @ I F =0.1mA @ I F =1mA 0.45 1)Valid provided that leads at a distance of 4mm from case are kept at ambient temperature 0.275 0.46 Thermal resistance junction to ambient air C J