BAT86 CHENYI | Alldatasheet
Document overview
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Technical content
Features
- For general purpose applications
- These diodes features very low turn-on voltage and fast switching. MECHANICAL DATA
- Case: Do-35 glass case
- Polarity: Color band denotes cathode end
- Weight: Approx. 0.13 gram ABSOLUTE RATINGS(LIMITING VALUES)
ELECTRICAL CHARACTERISTICS
/G01/G02/G03/G04/G05 Dimensions in inches and (millimeters) /G01/G02/G03/G04/G01/G05/G06/G02/G07/G08 /G09/G09/G09/G09/G0A/G0B/G0C /G03/G02/G01/G07/G06/G05/G0D/G0E/G02/G04/G08 /G0A/G0F/G10 /G03/G02/G01/G07/G06/G05/G0D/G0E/G02/G04/G08 /G0A/G0F/G10 /G01/G02/G01/G0E/G11/G05/G0D/G02/G01/G08 /G0A/G0B/G0C /G12/G0F/G0B /G01/G02/G01/G0D/G01/G05/G01/G02/G04/G0D/G08 /G0A/G0B/G0C /G12/G0F/G0B Symbols Value Units Repetitive Peak Reverse Voltage VR 50 V Forward Continuous Current at T =25 0C IF 2001) mA Repetitive Peak Forward Current at t<1s,ä< 0.5,T A=250C IFRM 3001) mA Power Dissipation at T A=650C Ptot 2001) mW Junction temperature TJ 125 C Ambient Operating temperature Range TA -55~+125 C Storage Temperature Range TSTG -55~+150 C 1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature Reverse breakdown voltage Tested with 10 A pulsesµ Leakage current V =25VR Forward voltage Pulse Test at t 300 s, 2% I= 0 . 1 m A , at I =1mA, at I =10mA, at I =30mA, at I =100mA p F F F F F µδ 0.5 0.460 0.600 0.900 0.450 0.380 0.300 Thermal resistance junction to ambient Air Junction Capacitance at V =1V ,f=1MHz R Reverse recovery time Form I =10mA,I =10mA,I =1mAFRR V R)R(B V V V V V V µA pF K/W ns VF 0.200 VF 0.272 VF VF 0.365 VF 0.700 IR 0.2 CJ trr 1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature(DO-35) 300 /G01/G02 R JAθ These devices are protected by a PN junction guard ring against excessive voltage,such as electrostatic discharges.
- These diode is also available in the Mini-MELF case with type designation LL86
- Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,and low logic applications. Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 www.cnelectr.com