BAT86 SAMYANG | Alldatasheet
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Technical content
FEATURES
For general purpose applications This diodes features very low turn-on voltage and fast switching. This devices are protected MECHANICAL DATA Case:JEDEC DO--35,glass case Weight: Approx. 0.13 gram Symbols Min. UNITS 50.0 V V V V V V A pF ns 2001) 125 VF Value 50.0 2001) 5001) 3001) 1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature Continuous reverse voltage Forw ard continuous current @ TA=25 Repetitive peak forw ard current @ tp<1s, <=0.5,TA=25 0.6 0.9 0.5 trr R JA @ IF=100mA Leakage current VR=40V Junction capacitance at VR=1V,f=1MHz Reverse recovery time form IF=10mA to IR=10mA to IR=1mA Max.Typ. c-55 ---+ 150
ELECTRICAL CHARACTERISTICS
V mA mA mwPtot TJ TA voltage, such as electrostatic discharges Pow er dissipation @ TA=25 fast switching and low logic level applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,bias ing and coupling diodes for UNITS c-55 ---+ 125 Polarity: Color band denotes cathode end ABSOLUTE RATINGS VR IF IFRM Junction temperature Ambient operating temperature range BAT86 by a PN junction guard ring against excessive SMALL SIGNAL SCHOTTKY DIODES VOLTAGE RANGE: 50 V CURRENT: 0.2 A DO - 35(GLASS) @ IF=10mA @ IF=30mA 0.365 0.7 0.3 IR 0.2 0.3 Storage temperature range TSTG Reverse breakdow n voltage tested w ith 100 A pulses Symbols VR 0.38 Pulse test tp<300 <2% @ IF=0.1mA @ IF=1mA 0.45 1)Valid provided that leads at a distance of 4mm from case are kept at ambient temperature 0.275 0.46 Thermal resistance junction to ambient air CJ www.diode.co.kr SAMYANG ELECTRONICS SAM YANG All d ata sheet.com