BAT86 RECTRON | Alldatasheet
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MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted ) SILIC O N PLA N A R SC H O TTK Y B A R R IER D IO D E FEATU R ES * Fast Sw itching D evice(TR R <4.0nS) * D O -34 P ackage (JE D E C ) Through-H ole D evice Type M ounting H erm etically Sealed G lass C om pression B onded C onstruction A ll external surfaces are corrosion resistant and leads are readily solderable D im ensions in inches and (m illim eters) M AX. .165 (4.2) 1.02 (26.0) M IN . 1.02 (26.0) M IN . .079 (2.0) M AX. D IA. .022 (0.56) .018 (0.46) D IA. R A TIN G S M axim um Forw ard C om tinuous C urrent @ TA =25 O C M axim um Forw ard C om tinuous R everse V oltage S urge Forw ard C urrent @ tp<10m s Junction Tem perature S torage Tem perature R ange S Y M B O L B A T86 m Am ps V 200 R epetitive P eak Forw ard C urrent tp<1s:δ<0.5 Am psR500 125 -65 to + 150 m Am ps O C O C U N ITS IF VR IFR M IFSM TJ TSTG DO-34 2006-3 ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) Reverse voltage leakage current (VR=40V) Forward voltage Pulse Tesx tp<300µs,δ<2% (IF=10mA) (IF=1mA) (IF=0.1mA) (IF=30mA) (IF=100mA) Diode capacitance (VR=1,f=1MHz) Reveres recovery time (IF=IR=10mA,RL=100Ω ,IR=1mA) CHARACTERISTICS SYMBOL UNITS 5.0 0.30 0.45 0.38 0.60 0.90 8.0 4.0 µA V V pF nS Reverse breakdown voltage (IR=10µA) V(BR)R IR VF CD trr MAX. TYP. MIN. M A X IM U M R ATIN G S A N D E LE C TR IC A L C H A R A C TE R IS TIC S R atings at 25 o C am bient tem perature unless otherw ise specified. S ingle phase, half w ave, 60 H z, resistive or inductive load. For capacitive load, derate current by 20% .