BAT86 GOOD-ARK | Alldatasheet
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scitsiretcarahClamrehTdnasgnitaRmumixaM (Ratings at 25oC ambient temperature unless otherwise specified.) For general purpose applications. This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. This diode is also available in the MiniMELF case with type designation BAS86. Case: DO-35 Glass Case Weight: approx. 0.13g 68TAB edoiDlangiS-llamS edoiDykttohcS retemaraPl obmySe ulaVt inU egatlovesreversuounitnoCV R 05s tloV TtatnerrucsuounitnocdrawroF bma 52= oCI F 002 )1( Am tnerrucdrawrofkaepevititepeR tta p ,s1< υ< T,5.0 bma 52= oC I MRF 005 )1( Am TtanoitapissidrewoP bma 52= oCP tot 002 )1( Wm riatneibmaotnoitcnujecnatsiserlamrehTR θ AJ 003 )1(o W/C erutarepmetnoitcnuJT j 521 oC egnarerutarepmetgnitarepotneibmAT bma 521+ot56- oC egnarerutarepmetegarotST S 051+ot56- oC scitsiretcarahClacirtcelE (TJ=25oC unless otherwise noted.) retemaraPl obmySn oitidnoCtseT. niM. pyT. xaMt inU egatlovnwodkaerbesreveRV R)RB( IR 01= u )deslup(A0 5- - s tloV tnerrucegakaeLI R VR V04=- 3 .00 .5 uA egatlovdrawroF ttseteslup p 003< u ,s δ %2< VF IF Am1.0= IF Am1= IF Am01= IF Am03= IF Am001= 002.0 572.0 563.0 064.0 007.0 003.0 083.0 054.0 006.0 009.0 tloV ecnaticapaCC tot VR zHM1=f,V1=- - 8 pF emityrevoceresreveRt rr IF I,Am01= R ,Am01= Iot R Am1= --5 ns Notes: 1. Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.