BAT86 DSK | Alldatasheet
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Technical content
FEATURES
For general purpose applications This diodes features very low turn-on voltage and fast switching. This devices are protected MECHANICAL DATA Case:JEDEC DO--35,glass case Weight: Approx. 0.13 gram Symbols Min. UNITS 50.0 V V V V V V A pF ns 200 125 V F Value 50.0 200 500 300 1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature Continuous reverse voltage Forw ard continuous current @ T A =25 Repetitive peak forw ard current @ tp<1s, <=0.5,T A =25 0.6 0.9 5.0 t rr R θJA @ I F =100mA Leakage current V R =40V Junction capacitance at V R =1V,f=1MHz R everse recovery tim e form I F =10mA to I R =10mA to I R =1mA Max.Typ. c-55 ---+ 150
ELECTRICAL CHARACTERISTICS
V mA mA mw P tot T J T A voltage, such as electrostatic discharges Pow er dissipation @ T A =25 fast switching and low logic level applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and coupling diodes for UNITS c-55 ---+ 125 Polarity: Color band denotes cathode end ABSOLUTE RATINGS V R I F I FRM Junction temperature Ambient operating temperature range BAT86 by a PN junction guard ring against excessive SMALL SIGNAL SCHOTTKY DIODES VOLTA GE RA NGE: 50 V CURRENT: 0.2 A DO - 35(GLASS) @ I F =10mA @ I F =30mA 0.365 0.7 I R 0.2 0.3 Storage temperature range T STG Reverse breakdow n voltage tested w ith 100 A pulses Symbols V R 0.38 Pulse test tp<300 <2% @ I F =0.1mA @ I F =1mA 0.45 1)Valid provided that leads at a distance of 4mm from case are kept at ambient temperature 0.275 0.46 Thermal resistance junction to ambient air C J Dimensions in millimeters Diode Semiconductor Korea www.diode.kr