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扬州扬杰电子科技股份有限公司 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.comDocument Number S-S307 Rev. 1.0, 08-Jan-15 BAT85 Sckottky Barrier Diodes ■ Features ■Outline Dimensions and Mark

  • VR 30V
  • IFM 300mA ■ Applications
  • Applications where a very low forward voltage is required ■Limiting Values (Absolute Maximum Rating) Item Symbol Unit Conditions Max Continuous reverse voltage V R V 30 Forward continuous current I F mA Ta=25℃ 200 Peak forward current I FM mA Ta=25℃ 300 Surge forward current I FSM mA tp≤1s, Ta=25℃ 600 Power dissipation P tot mW Ta=65℃ 200 Maximum junction temperature Tj ℃ 125 Ambient operating temperature range TA -65 to +125 Storage temperature range Tstg ℃ -65 to +150 Junction ambient R thJA ℃/W On PC board 50mm ×50mm×1.6mm 250 ■Electrical Characteristics(Ta=25℃ Unless otherwise specified) Item Symbol Unit Conditions Min Max Reverse breakdown voltage V (BR)R V IR=10uA (pulsed) 30 Leakage current IR uA V R=25V 2 Forward voltage pulse test tp<300us,s<2% VF V I F=0.1mA 0.24 V I F=1mA 0.32 V I F=10mA 0.4 V I F=30mA 0.5 V I F=100mA 0.8 Capacitance C tot pF V R=1V, f =1MHZ 10 Reverse recovery time t rr ns I F= IR=10mA ,IR=0.1mA 5 1.02(26.0) MIN .165(4.20) MAX .022(0.55) MAX .079(2.00) MAX 1.02(26.0) MIN Dimensions in inches and (millimeters) DO-35 BAT COMPLIANT RoHS

扬州扬杰电子科技股份有限公司 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.comDocument Number S-S307 Rev. 1.0, 08-Jan-15 BAT85 ■Characteristics(Typical) Fig2. Typical instantaneous forward characteristics Fig1. Admissible power dissipation vs.ambient temperature Fig3. Typical reverse characteristics Fig4. Typical junction capacitance VR(V) VR(V) Ta(℃) CP(pF) Ptot(mW) IF(mA) IR(uA)