BAT85 RECTRON | Alldatasheet
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MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted ) SC H O TTK Y D IO D ES FEATU R ES * Fast Sw itching D evice(TR R <4.0nS) * D O -35 P ackage (JE D E C ) Through-H ole D evice Type M ounting H erm etically Sealed G lass C om pression B onded C onstruction A ll external surfaces are corrosion resistant and leads are readily solderable D im ensions in inches and (m illim eters) M AX. .165 (4.2) 1.02 (26.0) M IN . 1.02 (26.0) M IN . .079 (2.0) M AX. D IA. .022 (0.56) .018 (0.46) D IA. R A TIN G S M axim um Forw ard C om tinuous C urrent @ TA =25 O C M axim um Forw ard C om tinuous R everse V oltage S urge Forw ard C urrent @ tp<1s,TA =25 O C M axim um P ow er D issipation @ TA =65 O C O perating and S torage Tem perature R ange S Y M B O L B A T85 m Am ps V 200 M axim um P eak Forw ard C urrent @ TA =25 O C m Am ps300 600 200 -65 to + 125 m Am ps m W O C U N ITS IF VR IFM IFSM PD TJ,TSTG DO-35 2006-3 ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) Reverse voltage leakage current (VR=25V) Forward voltage Pulse Tesx tp<300µs,δ<2% (IF=10mA) (IF=1mA) (IF=0.1mA) (IF=30mA) (IF=100mA) Diode capacitance (VR=1,f=1MHz) Reveres recovery time (IF=IR=10mA,IR=1mA) CHARACTERISTICS SYMBOL UNITS 0.24 0.4 0.32 0.8 0.5 µA V V pF nS Reverse breakdown voltage (IR=10µA) V(BR)R IR VF CT trr MAX. TYP. MIN. M A X IM U M R ATIN G S A N D E LE C TR IC A L C H A R A C TE R IS TIC S R atings at 25 o C am bient tem perature unless otherw ise specified. S ingle phase, half w ave, 60 H z, resistive or inductive load. For capacitive load, derate current by 20% .