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Product data sheet 2002 Sep 02 DISCRETE SEMICONDUCTORS BAT74V Schottky barrier double diode M3D744

2002 Sep 02 2

NXP Semiconductors Product data sheet Schottky barrier double diode BAT74V

FEATURES

  • Low forward voltage
  • Low capacitance
  • Ultra small SMD plastic package
  • Flat leads: excellent coplanarity and improved thermal behaviour.

APPLICATIONS

  • Ultra high-speed switching
  • Voltage clamping
  • Line termination
  • Inverse polarity protection.

DESCRIPTION

Planar Schottky barrier double diode with an integrated guard ring for stress protection. Two separate dies encapsulated in a SOT666 ultra small SMD plastic package. PINNING PIN DESCRIPTION 1 anode 1 2 not connected 3 cathode 2 4 anode 2 5 not connected 6 cathode 1 handbook, halfpage 123 46 5 Top view MAM461 Fig.1 Simplified outline (SOT666) and symbol. Marking code: 74. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 30 V IF continuous forward current − 200 mA IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 − 300 mA IFSM non-repetitive peak forward current tp < 10 ms 600 mA Ptot total power dissipation Tamb ≤ 25 °C − 230 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 125 °C Tamb operating ambient temperature −65 +125 °C

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NXP Semiconductors Product data sheet Schottky barrier double diode BAT74V CHARACTERISTICS Tamb = 25 °C unless otherwise specified. Note 1. Pulse test: t p = 300 μs; δ = 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SOT666 standard mounting conditions. Soldering The only recommended soldering method is reflow soldering. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF continuous forward voltage IF = 0.1 mA 240 mV IF = 1 mA 320 mV IF = 1 0 mA 400 mV IF = 30 mA 500 mV IF = 1 00 mA; note 1; see Fig.2 800 mV IR reverse current VR = 25 V; note 1; see Fig.3 2 μA Cd diode capacitance VR = 1 V; f = 1 MHz; see Fig.4 10 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 416 K/W

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NXP Semiconductors Product data sheet Schottky barrier double diode BAT74V GRAPHICAL DATA handbook, halfpage10 IF VF (V) (mA) 10 1 1.20.80.40 MSA892 (3)(2)(1) (3)(2)(1) Fig.2 Forward current as a function of forward voltage; typical values. (1) T amb = 125 °C. (2) T amb = 85 °C. (3) T amb = 25 °C. 01 0 2 0 3 0 V (V)R 10 3 IR (μA) 10 2 10 1 (1) (2) (3) MSA893 Fig.3 Reverse current as a function of reverse voltage; typical values. (1) T amb = 125 °C. (2) T amb = 85 °C. (3) T amb = 25 °C. handbook, halfpage 01 02 03 0 VR (V) Cd (pF) MSA891 Fig.4 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tamb = 25 °C.

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NXP Semiconductors Product data sheet Schottky barrier double diode BAT74V PACKAGE OUTLINE UNIT b p cD E e1 HE Lp w REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 01-01-04 01-08-27 IEC JEDEC EIAJ mm 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 0.5 e 1.0 1.7 1.5 0.1 y 0.1 DIMENSIONS (mm are the original dimensions) 0.3 0.1 SOT666 bp pin 1 index D e A Lp detail X HE EA S 0 1 2 mm scale A 0.6 0.5 c X 123 456 Plastic surface mounted package; 6 leads SOT66 6 YS w M A

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NXP Semiconductors Product data sheet Schottky barrier double diode BAT74V DATA SHEET STATUS Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Printed in The Netherlands 613514/01/pp7 Date of release: 2002 Sep 02 Document order number: 9397 750 10101