BAT64-HF KEXIN | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
www.kexin.com.cn 1 Diodes ■ Features
- For low-loss, fast-recovery, meter protection, bias isolation and clamping applications
- Integrated diffused guard ring
- Low forward voltage 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1 2 Unit: mmSOT-23 0.1+0.05 -0.01 ■ Absolute Maximum Ratings Ta = 25℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Reverse breakdown voltage VR IR= 100 uA 40 V IF= 1 mA 350 IF= 10 mA 430 IF= 30 mA 520 IF= 100 mA 750 Reverse voltage leakage current IR VR=25 V 2 uA Capacitance between terminals CT VR= 1 V, f= 1 MHz 6 pF Forward voltage VF mV ■ Marking Parameter Symbol Rating Unit Peak Reverse Voltage VRM 40 DC Reverse Voltage VR 40 Forward Current IF 250 Non-repetitive Peak forward surge current @t=8.3ms IFSM 800 Power Dissipation PD 250 mW Thermal Resistance Junction to Ambient RθJA 400 ℃/W Junction Temperature TJ 125 Storage Temperature range Tstg -55 to 150 V mA Schottky Diodes BAT64-04/05/06-HF (KAT64-04/05/06-HF)
- Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish BAT64-04-HFBAT64-HF BAT64-05-HF BAT64-06-HF Type BAT64-HF BAT64-04-HF BAT64-05-HF BAT64-06-HF Marking 63S F 64S F 65S F 66S F
www.kexin.com.cn2 Diodes ■ Typical Characterisitics 0 8 16 24 32 40 0 25 50 75 100 125 100 150 200 250 300 100 0 10 20 30 40 0.1 100 1000 Capacitance Characteristics CAPACITANCE BETWEEN TERMINALS CT (pF) REVERSE VOLTAGE VR (V) Ta=25℃ f=1MHz Reverse CharacteristicsForward Characteristics Power Derating Curve POWER DISSIPATION PD (mW) AMBIENT TEMPERATURE Ta ( )℃ Ta=25℃ Ta=100 ℃ FORWARD VOLTAGE VF (V) FORWARD CURRENT IF (mA) 800 Ta=25℃ Ta=100 ℃ REVERSE VOLTAGE VR (V) REVERSE CURRENT IR (uA) Schottky Diodes BAT64-04/05/06-HF (KAT64-04/05/06-HF)