BAT62-08S KEXIN | Alldatasheet
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Features
Low barrier diode for detectors up to GHz frequencies Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Diode reverse voltage V RM 40 V Forward current V R 20 V Total power dissipation; T S 105 IFM 100 mA Junction temperature T j 150 Storage temperature range T stg - 5 5t o+ 1 5 0 Junction - soldering point 1) BAT62-08S 450 BAT62-09S tbd Note RthJS K/W 1.For calculation of R thJA please refer to Application Note Thermal Resistance Electrical Characteristics Ta = 25 Parameter Symbol Conditions Min Typ Max Unit Reverse current I R VR =4 0V 1 0 A Forward voltage V F IF = 2 mA 0.58 1 V Forward voltage matching 2) ÄV F IF = 2 mA 20 mV Note 2.ÄVF is the difference between lowest and highest VF in a multiple diode component. Marking Type BAT62-08S BAT62-09S Marking 62s 69s