BAT62-03W KEXIN | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
Features
Low Barrier diode for detectors up to GHz frequencies Electrical Characteristics Ta = 25 Parameter Symbol Test Condition Min Typ Max Unit Breakdown current I R VR =4 0V ,TA =2 5 10 A Forward voltage V F IF = 2 mA 0.58 1 V Diode capacitance C T VR = 0; f = 1 MHz 0.35 0.6 pF Case capacitance C C f=1M H z 0 . 1 p F Differential forward resistance R O VR = , f = 10 kHz 225 k Series inductance chip to ground Ls 2 nH Marking Marking L Absolute Maximum Ratings Ta = 25 Parameter Symbol Value Unit Diode reverse voltage V R 40 V Forward current I F 40 mA Junction current T j 150 Storage temperature T stg -55 to+150 Total power dissipation Ts 85 Ptot 100 mW Junction ambient(1) RthJA 650 K/W Junction-soldering point R thJS 810 K/W Note: 1.Package mounted on an epoxy pcb 15 mm16.7mmm 0.7 mm