BAT60

BAT60J STMICROELECTRONICS | Alldatasheet

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Technical content

BAT60J May 2000 - Ed: 4A SMALL SIGNAL SCHOTTKY DIODE n VERY SMALL CONDUCTION LOSSES n NEGLIGIBLE SWITCHING LOSSES n LOW FORWARD VOLTAGE DROP n EXTREMELY FAST SWITCHING n SURFACE MOUNTED DEVICE FEATURES AND BENEFITS Schottky barrier diode encapsulated in a SOD-323 small SMD package. This device is intended for use in portable equipments. It is suited for DC to DC converters, step-up conversion and power management.

DESCRIPTION

Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 10 V IF Peak forward current δ = 0.11 3 A IFSM Surge non repetitive forward current tp=10ms 5 A Ptot Power Dissipation Ta=25 °C 310 mW Tstg Storage temperature range - 65 to +150 °C Tj Maximum operating junction temperature * 150 °C TL Maximum temperature for soldering during 10s 260 °C ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit R th (j-a)Junction to ambient (*) 400 °C/W (*) Mounted on epoxy board with recommended pad layout. THERMAL RESISTANCE *: dPtot dTj Rth j a thermal runaway condition for a diode on its own heatsink A K60

Symbol Tests Conditions Tests conditions Min. Typ. Max. Unit VF * Forward voltage drop Tj = 25 °CI F = 10 mA 0.28 0.32 V IF = 100 mA 0.35 0.40 IF = 1 A 0.53 0.58 IR ** Reverse leakage current Tj = 25°CV R =5V 1 3 µA Tj = 25°CV R = 8 V 1.3 4 Tj = 80°CV R = 8 V 73 150 STATIC ELECTRICAL CHARACTERISTICS Pulse test: * tp = 380µs,δ <2 % ** tp = 5ms,δ <2 % To evaluate the conduction losses the following equation: P = 0.38 x IF(AV) + 0.17 IF (RMS)

0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 IF(av) (A) PF(av)(W) T δ=tp/T tp δ = 0.05 δ =1 Fig. 1:Average forward power dissipation versus average forward current. 0 25 50 75 100 125 150 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 Tamb( °C) IF(A) T δ=tp/T tp Fig. 2-1:Peak forward current versus ambient temperature (δ = 0.11). 0 25 50 75 100 125 150 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 Tamb( °C) IF(av)(A) T δ=tp/T tp Fig. 2-2:Average forward current versus ambient temperature (δ = 0.5). 1E-3 1E-2 1E-1 1E+0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t(s) IM(A) Ta=25°C Ta=50°C Ta=75°C IM t δ=0.5 Fig. 3:Non repetitive surge peak forward current versus overload duration (maximum values). 1E-4 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 1E-3 1E-2 1E-1 1E+0 t(s) Zth(j-a)/Rth(j-a) δ = 0.5 δ = 0.2 δ = 0.1 Single pulse T δ=tp/T tp Fig. 4:Relative variation of thermal impedance junc- tion to ambient versus pulse duration (Epoxy printed circuit board FR4 with recommended pad layout). 0123456789 1 0 1E-4 1E-3 1E-2 1E-1 1E+0 1E+1 VR(V) IR(mA) Tj=80°C Tj=25°C Tj=150°C Fig. 5:Reverse leackage current versus reverse voltage applied (typical values).

Tj(°C) IR[Tj] / IR[Tj=25°C] VR=8V Fig. 6:Reverse leackage current versus junction temperature (typical values). 11 0 100 VR(V) C(pF) F=1MHz Tj=25°C Fig. 7:Junction capacitance versus reverse voltage applied (typical values). 1E-1 1E+0 1E+1 VFM(V) IFM(A) Tj=150°C (Typical values) Tj=80°C (Typical values) Tj=25°C (Maximum values) Fig. 8-1:Forward voltage drop versus forward cur- rent (High level). 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VFM(V) IFM(A) Tj=150°C (Typical values) Tj=25°C (Maximumvalues)Tj=80°C (Typical values) Fig. 8-2:Forward voltage drop versus forward cur- rent (Low level). 0 1 02 03 04 05 06 07 08 09 0 1 0 0 100 150 200 250 300 350 400 450 500 550 600 S(Cu) (mm ) Rth(j-a) (°C/W) IF=0.75A Fig. 9:Thermal resistance junction to ambient ver- sus copper surface (epoxy printed circuit board FR4, copper thickness: 35µm).

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics  2000 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com PACKAGE MECHANICAL DATA SOD-323 H b D E A L Q1c REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 1.17 0.046 A1 0 0.1 0 0.004 b 0.25 0.44 0.01 0.017 c 0.1 0.25 0.004 0.01 D 1.52 1.8 0.06 0.071 E 1.11 1.45 0.044 0.057 H 2.3 2.7 0.09 0.106 L 0.1 0.46 0.004 0.02 Q1 0.1 0.41 0.004 0.016 Type Marking Package Weight Base qty Delivery mode BAT60J 60 SOD-323 0.005 g. 3000 Tape & reel n Epoxy meets UL94V-0 MARKING