BAT54

BAT54 SMC | Alldatasheet

Document overview

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• PDF pages: 5

Technical content

Technical Data Green Products Data Sheet N0123, Rev. C

• China - Germany - Korea - Singapore - United States •
• http://www.smc-diodes.com - sales@ smc-diodes.com • BAT54/A/C/S SURFACE MOUNT SCHOTTKY BARRIER DIODE BAT54/A/C/S SCHOTTKY RECTIFIER Applications:
• Small signal switching Features:
• Negligible switching losses
• Very small conduction losses
• Low forward voltage drop
• Surface mount device
• Double diodes with different pining are available
• Schottky barrier diodes encapsulated in a SOT-23 small SMD packages
• This is a Pb − Free Device
• All SMC parts are traceable to the wafer lot
• Additional testing can be offered upon request Mechanical Dimensions: In Inches / mm BAT54C Common Cathode BAT54A Common Anode BAT54 Single BAT54S Series

Technical Data Green Products Data Sheet N0123, Rev. C

• China - Germany - Korea - Singapore - United States •
• http://www.smc-diodes.com - sales@ smc-diodes.com • BAT54/A/C/S SURFACE MOUNT SCHOTTKY BARRIER DIODE Marking Diagram: KL1/KL2/KL3/KL4 = Part Name BAT54 BAT54A BAT54C BAT54S Note: If date code is before 16221, please contact with factory about marking. Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package Shipping BAT54/A/C/S SOT-23(Pb-Free) 3000pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification.

Technical Data Green Products Data Sheet N0123, Rev. C

• China - Germany - Korea - Singapore - United States •
• http://www.smc-diodes.com - sales@ smc-diodes.com • BAT54/A/C/S SURFACE MOUNT SCHOTTKY BARRIER DIODE Maximum Ratings: Characteristics Symbol Condition Max. Units Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 30 V Average Forward Current I F(AV) 50% duty cycle @TC =80°C, rectangular wave form 0.2 A Peak One Cycle Non-Repetitive Surge Current (per leg) I FSM 8.3 ms, half Sine pulse 0.6 A Power dissipation# Ptot Tamb = 25 °C 200 mW # for double diodes, Ptot is the total dissipation of both diodes. Electrical Characteristics: Characteristics Symbol Condition Max. Units Forward Voltage Drop(per leg)* V F1 @ 0.1mA, Pulse, TJ = 25 °C @ 1mA, Pulse, TJ = 25 °C @ 10mA, Pulse, TJ = 25 °C @ 30mA, Pulse, TJ = 25 °C @ 100mA, Pulse, TJ = 25 °C 0.24 0.32 0.40 0.50 1.0 V Reverse Current(per leg)** I R1 @V R = rated VR, Pulse, TJ = 25 °C 2.0 μA I R2 @ V R = rated VR, Pulse, TJ = 100°C 100 μA Junction Capacitance (per leg) CT @VR = 5.0 V, Tc=25℃ fSIG = 1MHz 10 pF Reverse Recovery Time t rr I F=10mA IR = 10mA TJ = 25 °C Irr =1 mA RL=100Ω 5 ns Pulse test: * tp=380ms, δ<2% * * tp=5ms, δ<2% Thermal-Mechanical Specifications: Characteristics Symbol Condition Specification Units Junction Temperature T J - 125 °C Storage Temperature T stg - -55 to +150 °C Typical Thermal Resistance Junction to Ambient RθJA DC operation 500 °C/W Case Style SOT-23

Technical Data Green Products Data Sheet N0123, Rev. C

• China - Germany - Korea - Singapore - United States •
• http://www.smc-diodes.com - sales@ smc-diodes.com • BAT54/A/C/S SURFACE MOUNT SCHOTTKY BARRIER DIODE

Technical Data Green Products Data Sheet N0123, Rev. C

• China - Germany - Korea - Singapore - United States •
• http://www.smc-diodes.com - sales@ smc-diodes.com • BAT54/A/C/S SURFACE MOUNT SCHOTTKY BARRIER DIODE DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..