BAT54 MCC | Alldatasheet

Document overview

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Technical content

Features

  • Low Forward Voltage
  • Surface Mount device
  • Very small conduction losses DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A .110 .120 2.80 3.04 B .083 .098 2.10 2.64 C .047 .055 1.20 1.40 D .035 .041 .89 1.03 E .070 .081 1.78 2.05 F .018 .024 .45 .60 G .0005 .0039 .013 .100 H .035 .044 .89 1.12 J .003 .007 .085 .180 K .015 .020 .37 .51 MCC Catalog Number Device Marking Type Pin Configuration Maximum Ratings Continuos Reverse Voltage VR 30V Electrical Characteristics @ 25 °C Unless Otherwise Specified Ratings Symbol Max. Notes Forward Voltage at IF = 0.1mA IF = 1mA IF = 10mA IF = 30mA IF = 100mA VF 240mV 320mV 400mV 500mV 900mV Reverse Current IR 2.0 uA VR = 25V Reverse Breakdown Voltage V (BR) >30V Capacitance CJ 10pF Measured at 1.0MHz, V R=1.0V Reverse Recovery Time t rr 5nS IF=IR=10mA; I(REC) = 1mA Thermal Resistance, Junction to Ambient R θJA 500K/W .079 2.000 inches mm .031 .800 .035 .900 .037 .950 .037 .950 A BC D EF G H J K www.mccsemi.com Forward Current IF 0.3A /G01/G02/G03/G04/G05/G06/G07/G05/G08/G08/G09/G04/G03/G02/G0A/G0B/G06/G07omponents

21201 Itasca Street Chatsworth

/G07/G18/G06/G19/G0F/G1A/G0F/G0F /G1B/G15/G05/G1C/G09/G1D/G06/G1E/G1F/G0F/G1F/G20/G06/G21/G10/G0F/G22/G23/G19/G1A/G1A /G24/G0A/G25/G1D/G06/G06/G06/G1E/G1F/G0F/G1F/G20/G06/G21/G10/G0F/G22/G23/G19/G1A/G19 MCC Non-Repetitive Peak Forward Current t<1s IFSM 1.0mA Total Power Dissipation @ TA = 25°C PD 250mW Storage Temperature Range Tstg -55°C to 150°C Junction Temperature Tj 150°C BAT54 L4P Single Figure 1 BAT54A L42 Dual Figure 2 BAT54C L43 Dual Figure 3 BAT54S L44 Dual Figure 4 (See Page 3) Soldering temperature during 10s T j 260°C

0.05 0.10 0.15 0.20 0.25 0.30 0.35 PF(av)(W) δ = 0.2 δ = 0.5 δ = 1 δ = 0.05 δ = 0.1 IF(av) (A) T δ=tp/T tp Fig.1 : Average forward power dissipation versus average forward current. 0 25 50 75 100 125 1500.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 IF(av)(A) T δ=tp/T tp Tamb(°C) Fig.2 : Average forward current versus ambient temperature ( δ = 1). 1E-3 1E-2 1E-1 1E+00.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IM(A) Ta=25°C Ta=50°C Ta=100°CIM t δ=0.5 t(s) Fig.3 : Non repetitive surge peak forward current versus overload duration (maximum values). 1E-3 1E-2 1E-1 1E+0 1E+1 1E+20.01 0.10 1.00 tp(s) Zth(j-a)/Rth(j-a) T δ=tp/T tp Single pulse δ = 0.1 δ = 0.2 δ = 0.5 Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration (alumine substrate 10mm x 8mm x 0.5mm). www.mccsemi .com BAT54 thru BAT54S MCC

VR(V) C(pF) F=1MHz Tj=25°C Fig.7 : Junction capacitance versus reverse voltage applied (typical values). 1E-3 1E-2 1E-1 5E-1 VFM(V) IFM(A) Tj=100°C Tj=50°C Tj=25°C Fig.8 : Forward voltage drop versus forward current (typical values). 0 5 10 15 20 25 301E-2 1E-1 1E+0 1E+1 1E+2 VR(V) IR(µA) Tj=50°C Tj=25°C Tj=100°C Fig.5 : Reverse leakage current versus reverse voltage applied (typical values). 0 25 50 75 100 125 1501E-2 1E-1 1E+0 1E+1 1E+2 1E+3 1E+4 IR(µA) VR=30V Tj(°C) Fig.6 : Reverse leakage current versus junction temperature. www.mccsemi .com BAT54 thru BAT54S MCC BAT54 BAT54A BAT54C BAT54S Figure 1 Figure 2 Figure 3 Figure 4 Pin Configuration - Top View 1 2