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Page:P2-P1 Plastic- MAKO SEMICONDUCTOR CO.,LIMITED SCHOTTKY DIODES
FEATURES
Extremely Fast Switching Speed MARKING: MAXIMUM RA TINGS (TA=25 unless otherwise noted) Parameter Symbol Limits Unit Peak Repetitive Peak reverse voltage Working Peak Reverse V oltage DC Blocking V oltage V RRM V RWM V R 30 V Forward Continuous Current IFM 200 mA Power Dissipation PD 200 mW Storage temperature T STG -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Min. T yp. Max. Unit Conditions Reverse Breakdown V oltage V (BR)R 30 V IR=100 μA Forward voltage V F1 0.24 V IF=0.1mA V F2 0.32 V IF=1mA V F3 0.40 V IF=10mA V F4 0.50 V IF=30mA V F5 1 V IF=100mA Reverse current IR 2 μA V R =25V Diode Capacitance C D 10 pF V R =1V ,f=1MHz Reverse Recovery Time trr 5 nS IF=IR=10mA Irr=0.1XIR,RL=100Ω BAT54 KL1 BAT54A KL2 BAT54C KL 3 BAT54S KL4 SOT-23 Encapsulate Diodes BAT54/A/C/S MAKO SEMICONDUCTOR CO.,LIMITED http://www.makosemi.hk/
Page:P2-P2 MAKO SEMICONDUCTOR CO.,LIMITED Typical Characteristics Plastic-Encapsulate Diodes BAT54/A/C/S MAKO SEMICONDUCTOR CO.,LIMITED http://www.makosemi.hk/