BAT42W AITSEMI | Alldatasheet

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AiT Semiconductor Inc. www.ait-ic.com BAT42W~BAT43W SCHOTTKY DIODES REV1.0 - DEC 2014 RELEASED - - 1 - DESCRIPTION FEATURES The BAT42W~BAT43W is available in SOD-123 package  Low Forward Voltage Drop  Fast Switching Time  Surface Mount Package Ideally Suited for Automatic Insertion  RoHS Compliant  Available in SOD-123 package ORDERING INFORMATION MECHANICAL DATA Package Type Part Number SOD-123 BAT42W BAT43W Note SPQ: 3,000pcs/Reel AiT provides all RoHS Compliant Products Case: Plastic Case material-UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Type Codes: BAT42W S7 BAT43W S8 Weight: 0.01 grams (approx.)

AiT Semiconductor Inc. www.ait-ic.com BAT42W~BAT43W SCHOTTKY DIODES REV1.0 - DEC 2014 RELEASED - - 2 - ABSOLUTE MAXIMUM RATINGS @ TA = 25°C, unless otherwise specified VRRM, Peak Repetitive Reverse Voltage VRWM, Working Peak Reverse Voltage VR, DC Blocking Voltage 30V VR(RMS), RMS Reverse Voltage 21V IFM, Forward Continuous CurrentNOTE1 200mA IFRM, Repetitive Peak Forward Current NOTE1 @t< 1.0s 500mA IFSM, Non-Repetitive Peak Forward Surge Current @ t < 10ms 4.0A PD, Power Dissipation 200mW RθJA, Thermal Resistance Junction to Ambient Air NOTE1 500°C/W TJ, TSTG, Operating and Storage Temperature Range -55~125°C Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

ELECTRICAL CHARACTERISTICS

@ TA = 25°C, unless otherwise specified Parameter Symbol Conditions Min. Typ. Max. Unit Reverse Breakdown Voltage NOTE2 V(BR)R IR = 100μA 30 V Forward Voltage Drop NOTE2 VFM IF = 200mA IF = 10mA IF = 50mA IF = 2.0mA IF=15mA All Type BAT42W BAT42W BAT43W BAT43W 0.26 1.00 0.40 0.65 0.33 0.45 V Peak Reverse Current NOTE2 IRM VR= 25V VR = 25V, TJ= 100°C 500 100 nA μA Total Capacitance CT VR = 1.0V, f = 1.0MHz 10 pF Reverse Recovery Time trr IF = IR = 10mA, Irr= 0.1 x IR, RL = 100Ω 5.0 ns Rectification Efficiency ηv RL= 15Ω, CL=300pF, f = 45MHz，VRF = 2.0V 80 % NOTE1: Part mounted on FR-4 board with recommended pad layout. NOTE2: Short duration pulse test used to minimize self-heating effect.

AiT Semiconductor Inc. www.ait-ic.com BAT42W~BAT43W SCHOTTKY DIODES REV1.0 - DEC 2014 RELEASED - - 3 - TYPICAL CHARACTERISTICS Figure 1. Power Derating Curve

PACKAGE INFORMATION

Dimension in SOD-123 (Unit: mm) Symbol Min Max A 3.55 3.85 B 2.55 2.85 C 1.40 1.70 D - 1.35 E 0.55 TYP G 0.25 - H 0.11 TYP J - 0.10 ⍺ 0° 8°

AiT Semiconductor Inc. www.ait-ic.com BAT42W~BAT43W SCHOTTKY DIODES REV1.0 - DEC 2014 RELEASED - - 4 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to ob tain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or s ervere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product desi gn or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.