BAT42 RECTRON | Alldatasheet
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MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted ) SILICON PLANAR SCHOTTKY DIODES
FEATURES
- Fast Switching Device(TRR<4.0nS) * DO-35 Package (JEDEC) Through-Hole Device Type Mounting Hermetically Sealed Glass Compression Bonded Construction All external surfaces are corrosion resistant and leads are readily solderable Dimensions in inches and (millimeters) MAX. .165 (4.2 ) 1.02 (26.0 ) MIN. 1.02 (26.0 ) MIN. .079 (2.0 ) MAX. DIA. .022 (0.56 ) .018 (0.46 ) DIA. RATINGS Maximum Forward Comtinuous Current @ T A=25 O C Maximum Forward Comtinuous Reverse Voltage Surge Forward Current @ tp<10ms Maximum Power Dissipation @ T A=65 O C Storage Temperature Range Junction Temperature SYMBOL BAT42 mAmps V 200 Maximum Peak Forward Current @tp<1s,d<0.5 mAmps500 200 -65 to + 150 125 Amps mW O C O C UNITS IF VR IFRM IFSM PD TSTG TJ DO-35 2006-3 ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) Reverse voltage leakage current (VR=25V,TJ=25 O (VR=25V,TJ=100 O Forward voltage Pulse Tesx tp<300ms,d<2% (IF=50mA) (IF=10mA) (IF=200mA) Diode capacitance (VR=1,f=1MHz) Reveres recovery time (IF=IR=10mA,IRR=1mA,RL=100W) CHARACTERISTICS SYMBOL UNITS 0.5 100 0.65 0.40 1.0 mA V V pF nS Reverse breakdown voltage (IR=100mA) V(BR)R IR VF CD trr MAX. 7.0 TYP. MIN. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
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