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Discrete Triacs(Non-Isolated) ABSOLUTE MAXIMUM RATINGS Parameter Value Unit IT(RMS) RMS on-state current (full sine wave) TO-247AD Tc = 80 °C 41 A ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) F = 60 Hz t = 16.7 ms 420 A F = 50 Hz t = 20 ms 400 I²tI ²t Value for fusing tp = 10 ms 880 A²s dI/dt Critical rate of rise of on-state current IG = 2 x I GT , tr < 100 ns F = 120 Hz Tj = 125°C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 8 A PG(AV) Average gate p ower diss ipation Tj = 125°C 1 W Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Test Conditions Quadrant Unit IGT (1) VD = 12 V RL = 33 I - II - III MAX. mA VGT ALL MAX. 1.3 V VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C ALL MIN. 0.2 V IH (2) IT = 500 mA MAX. mA IL IG = 1.2 IGT I - III-IV MAX. mA II dV/dt (2) VD = 67 % VDRM gate open Tj = 125°C MIN. V/µs (dI/dt)c (2) Without snubber Tj = 125°C MIN. A/ms Symbol Ω VDSM/VRSM Non repetitive surge peak off-state voltage tp = 10 ms Tj = 25°C VDRM/VRRM + 100 V Dimensions TO-247AD Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 D 3.55 3.65 0.140 0.144 E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0 0.426 0.433 L 4.7 5.3 0.185 0.209 M 0.4 0.8 0.016 0.031 N 1.5 2.49 0.087 0.102 G IV Value 100 160 500 BT%41-200 BT%41-400 BT%41-600 BT%41-800 BT%41-1000 BT%41-1200 V DR055M V 200 400 600 800 1000 1200 V DS056M V 220 450 700 900 1100 1300 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com
Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 Symbol Test Conditions Value Unit VTM (2) ITM = 60 A tp = 380 µs Tj = 25°C MAX. 1.55 V Vto (2) Threshold voltage Tj = 125°C MAX. 0.85 V Rd (2) Dynamic resistance Tj = 125°C MAX. 10 mΩ IDRM IRRM VDRM = VRRM Tj = 25°C MAX. 5µ A Tj = 125°C 5 mA THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) 0.6 °C/W Rth(j-a) Junction to ambient °C/W50 PRODUCT SELECTOR Part Number Voltage (xxx) Sensitivity Type Package
200 V 1000 V
BTB41 X X 50 mA Standard TO-247AD OTHER INFORMATION Part Number Marking Weight Base quantity Packing mode BTB41 BTB41 6 g 120 Bulk BTB41 Discrete Triacs(Non-Isolated) ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com
F ig. 1 : M aximum po wer di s s ipation v ers us R MS on-s tate c urrent (f ull c ycle). F ig. 2 : R M S on-s tate c urrent v ers us cas e temperature (full c ycle). 0 5 10 15 20 25 30 35 400 IT (R MS ) (A ) P (W) 180° α α 0 25 50 75 100 1250 T c (° C ) IT (R MS ) (A ) B TA 41 B TB 41 α = 180° F ig. 3 : R e lative v ariation of t her mal impeda nce versus pulse duration. F ig. 4 : O n-s tate characteris tics ( maximum values ). F ig. 5 : S urge peak o n-s tate c urrent v ers us number of cycl es . F ig. 6 : Non-repet itive s urge pea k on-s tate current f or a s inus oidal puls e wi th wi dth tp < 10 ms, and corresponding value of I ²t. 1.E -03 1.E -02 1.E -01 1.E +00 K =[Zth/R th] Zth(j-c) Zth(j-a) B TA/B T B 41 tp (s ) 100 400 V T M (V ) IT M (A ) T j=25°C T j max T j max.: V to = 0.85 V R d = 10 m Ω 1 10 100 10000 100 150 200 250 300 350 400 450 Number of c ycles IT S M (A ) Non repetitive T j initial=25°C R epetitive T c=70°C One cycle t=20ms 0.01 0.10 1.00 10.0 0100 1000 10000 tp (ms ) IT S M (A ), I² t (A ² s ) T j initial=25°C IT S M I²tdI/dt limitation: 50A /µ s BTB41 Discrete Triacs(Non-Isolated) ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com
F ig. 7 : R el ative v ariation of gat e trigger c urrent, holding c urrent an d latching c urrent v ers us junction temperature ( typical values). F ig. 8: R elative variation of critical rate of decreas e of main current vers us (dV/dt)c (typical values ). -40 -20 0 20 40 60 80 100 120 1400.0 0.5 1.0 1.5 2.0 2.5 T j(° C ) IG T,IH,IL [T j] / IG T ,IH,IL [T j=25° C ] IG T IH & IL 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 (dV /dt)c (V /µ s ) (dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c F ig. 9 : R el ative v ariation of c ritical rate of dec reas e of m ain current v ers us j unction temperature. 0 25 50 75 100 1250 T j (° C ) (dI/dt)c [T j] / (dI/dt)c [T j s pec ified] BTB41 Discrete Triacs(Non-Isolated) ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com