BAT41 BILIN | Alldatasheet
Document overview
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Technical content
FEATURES
For general purpose applications This diode features very low turn-on voltage and fast switching. These devices are protected MECHANICAL DATA Case:JEDEC DO--35,glass case Weight: Approx. 0.13 gram Symbols Min. UNITS 100 - - V V µA pF Thermal resistance junction to ambient CJ - - 1.0 <2% F=1mA,Tj=25 @ IF=200mA,Tj=25 Storage temperature range TSTG Reverse breakdown voltage @IR=100µ A,Tj=25 Symbols VBR IR BAT41 by a PN junction guard ring against excessive SMALL SIGNAL SCHOTTKY DIODES VOLTAGE RANGE: 100 V CURRENT: 100 mA DO - 35(GLASS) GALAXY ELECTRICAL voltage, such as electrostatic discharges Pow er dissipation @TA =95 UNITS Polarity: Color band denotes cathode end ABSOLUTE RATINGS VRRM IF IFRM I FSM Ptot TJ TL 750 1) -55 ---+ 125 V mA mA 100 00 1) 350 1) mA mW Max.Typ. c-55 ---+ 150
ELECTRICAL CHARACTERISTICS
Ambient operating temperature range RθJA Leakage current @Tj=25 Junction capacitance at VR=1V,f=1MHz VF Forw ard voltage @ I - - 20 - - 20 - - 300 1) Value 100 1) 1) On infinite heatsink with 4mm lead length. Continuous reverse voltage Forw ard continuous current @TA=25 Repetitive peak forward current tp≤1s,δ≤0.5 Surge forw ard current @tp≤10ms www.galaxycn.com BL Document Number 0265023 1.BLGALAXY ELECTRICAL 230 VR=50V @T j=100 - 0.4 0.45 - - 0.1 2)Pulse test tp<300
0.01 0.1 100 1000 T J =-40 T J =125 T J =25 0 5 10 15 20 25 30 0.01 0.1 100 1000 T J =125 100 0 5 1 01 5 2 02 53 0 FORWARD VOLTAGE,VOLT AMBIENT TEMPERATURE( ℃ ) REVERSE VOLTAGE, VOLT FIG. 3 -- TYPICAL REVERSE CHARACTERISTICS FIG.4 -- TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE, VOLT JUNCTION CAPACITANCE,pF FORWARD CURRENT , REBERSE LEAKAGE CURRENT, BAT41 FIG.1 -- ADMISSIBLE POWER DISSIPATION VS. AMBIENT TEMPERATURE FIG. 2--TYPICAL INSTANTANEOUS FORWORD CHARACTERISTICS RATINGS AND CHARACTERISTIC CURVES www.galaxycn.com 2.Document Number 0265009 BLGALAXY ELECTRICAL MILLI AMPERES MICRO AMPERES