BAT26-400

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Discrete Triacs(Isolated) ABSOLUTE MAXIMUM RATINGS Parameter Value Unit IT(RMS) RMS on-state current (full sine wave) TO-218 Tc = 100°C 25 A ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) F = 60 Hz t = 16.7 ms 250 A F = 50 Hz t = 20 ms 260 I²tI ²t Value for fusing tp = 10 ms 340 A²s dI/dt Critical rate of rise of on-state current IG = 2 x I GT , tr < 100 ns F = 120 Hz Tj = 125°C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 4 A PG(AV) Average gate p ower diss ipation Tj = 125°C 1 W Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) ■ SNUBBERLESSand LOGIC LEVEL(3 Quadrants) Symbol Test ConGLtions Quadrant BTA Unit CW BW IGT VD = 12 V RL = 33 I - II - III MAX. 35 50 mA VGT I - II - III MAX. 1.3 V VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C I - II - III MIN. 0.2 V IH IT = 500 mA MAX. 50 75 mA IL IG = 1.2 IGT I - III MAX. 70 80 mA II 80 100 dV/dt VD = 67 % VDRM gate open Tj = 125°C MIN. 500 1000 V/µs (dI/dt)c Without snubber Tj = 125°C MIN. 22 A/ms Dimensions TO-218T2 G Symbol Ω VDSM/VRSM Non repetitive surge peak off-state voltage tp = 10 ms Tj = 25°C VDRM/VRRM + 100 V REF. DIMENSIONS Millim eters Inches A 4.4 4.6 0.173 0.181 B 1.45 1.55 0.057 0.061 C 14.35 15.60 0.565 0.614 D 0.5 0.7 0.020 0.028 E 2.7 2.9 0.106 0.114 F 15.8 16.5 0.622 0.650 G 20.4 21.1 0.815 0.831 H 15.1 15.5 0.594 0.610 J 5.4 5.65 0.213 0.222 K 3.4 3.65 0.134 0.144 ØL 4.08 4.17 0.161 0.164 P 1.20 1.40 0.047 0.055 R 4.60 0.181 R H K GF E D B A C J J P ØL G Type BTA26-400 BTA26-600 BTA26-800 BTA26-1000 BTA26-1200 VRRM VDRM V 400 600 800 1000 1200 VRSM VDSM V 500 700 900 1100 1300 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com

■ STANDARD (4 Quadrants) STATIC CHARACTERISTICS Symbol Test Conditions Quadrant Value Unit IGT VD = 12 V RL = 33 I - II - III IV MAX. 50 100 mA VGT ALL MAX. 1.3 V VGD VD = VDRM RL = 3.3 Tj = 125°C ALL MIN. 0.2 V IH IT = 500 mA MAX. 80 mA IL IG = 1.2 IGT I - III - IV MAX. 70 mA II 160 dV/dt VD = 67 % VDRM gate open Tj = 125°C MIN. 500 V/µs (dV/dt)c (dI/dt)c =13.3 A/ms Tj = 125°C MIN. 10 V/µs Symbol Test Conditions Value Unit VTM ITM = 25 A tp = 380 µs Tj = 25°C MAX. 1.55 V Vto Threshold voltage Tj = 125°C MAX. 0.85 V Rd Dynamic resistance Tj = 125°C MAX. 16 mΩ IDRM IRRM VDRM = VRRM Tj = 25°C MAX. 5µ A Tj = 125°C 3 mA THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) 0.8 °C/W Rth(j-a) Junction to ambient °C/W60 PRODUCT SELECTOR Part Number Voltage (xxx) Sensitivity Type Package

200 V 100 V

BTA26 X X 50 mA Standard TO-218 OTHER INFORMATION Part Number Marking Weight Base quantity Packing mode BTA26 BTA26 4.6g 250 Bulk Ω Ω BTA26 Discrete Triacs(Isolated) ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com

F ig. 1: M aximum po wer di s s ipation v ers us R MS on-s tate c urrent (f ull c ycle). F ig. 2-: R MS on-s tate c urrent vers us cas e temperature (full c ycle). F ig. 3 : R elative v ariation of t her mal i mpedanc e vers us puls e durat ion. F ig. 4 : O n-s tate c harac teris tics (m aximum values ). F ig. 5 : S urge peak on-s tate c urrent v ersus number of cycl es. 0 5 10 15 20 250 IT (R MS ) (A ) P (W) 1E -3 1E -2 1E -1 1E +0 1E +1 1E +25E +21E -3 1E -2 1E -1 1E +0 tp (s ) K =[Zth/R th] Zth(j-c) Zth(j-a) B TA/B T B 24/T 25 Zth(j-a) B TA26 100 300 V T M (V ) IT M (A ) T j=25°C T j max T j max. V to = 0.85V R d = 16 mΩ 1 10 100 10000 100 150 200 250 300 Number of c ycles IT S M (A ) Non repetitive T j initial=25°C R epetitive T c=75°C One cycle t=20ms BTA26 Discrete Triacs(Isolated) 0 25 50 75 100 1250 T c (°C ) IT (R MS ) (A ) B TA 26 F ig. 6 : Non-repetitive s urge peak on-s tate current for a s inus oidal puls e with width tp < 10ms, and corres ponding value of I²t. 0.01 0.10 1.00 10.00100 1000 3000 tp (ms ) IT S M (A ),I² t (A² s ) T j initial=25°C IT S M I²t dI/dt limitation: 50A /µs ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com

F ig. 7 : R elative v ariation of gate t rigger current, holding curren t and l atching current v ersus junction temperature (typical values ). F ig. 8 : R elative v ariation of c ritical rate of dec reas e of main curren t v ers us (dV /dt)c (typical values ). F ig. 9 : R elative v ariation of c ritical rat e of decreas e of m ain c urrent v ers us j unction temperature. -40 -20 0 20 40 60 80 100 120 1400.0 0.5 1.0 1.5 2.0 2.5 T j(°C ) IG T,IH,IL [T j] / IG T,IH,IL [T j=25°C ] IG T IH & IL 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 (dV /dt)c (V /µs ) (dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c B W/C W/T 2535 B 0 25 50 75 100 1250 T j (°C ) (dI/dt)c [T j] / (dI/dt)c [T j s pec ified] BTA26 Discrete Triacs(Isolated) ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com