BAT20J

BAT20J STMICROELECTRONICS | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

BAT20J® April 2004 - Ed: 1 HIGH EFFICIENCY SWITCHING AND ULTRA LOW LEAKAGE CURRENT SCHOTTKY DIODE ■ Low conduction losses ■ Very low reverse current ■ Negligible switching losses ■ Low capacitance diode ■ Low forward and reverse recovery times ■ Extremely fast switching ■ Surface mount device FEATURES AND BENEFITS The BAT20J is using 23V schottky barrier diode encapsulated on a SOD-323 package. This is spe- cially suited for switching mode in mobile phone and PDA power management applications or LED driver circuits (step up converters).

DESCRIPTION

Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 23 V IF(RMS) Repetitive peak forward current 2 A IF(AV) Average forward current δ = 0.38 1 A IFSM Surge non repetitive forward current (tp=10ms sinusoidal) 5 A Tstg Maximum storage temperature range - 65 to +150 °C Tj Maximum operating junction temperature * 150 °C TL Maximum temperature for soldering during * 260 °C ABSOLUTE RATINGS (limiting values) *: dPtot dTj Rth j a thermal runaway condition for a diode on its own heatsink IF(AV) 1A VRRM 23 V IR 25°C(max) @ 15V 12 µA Tj (max) 150 °C MAIN PRODUCT CHARACTERISTICS Part Number Marking BAT20JFILM 20 Order code AK

Symbol Parameter Value Unit Rth (j-a) Junction to Ambient (*) 600 °C/W (*) Mounted on epoxy board without copper heat sink. THERMAL RESISTANCE Symbol Parameters Tests conditions Min. Typ. Max. Unit IR * Reverse leakage current (see note 1) Tj = 25°C V R =5V VR =8V VR =1 5V 0.65 0.88 3.00 µA I R * Reverse leakage current Tj = 85°C V R =5V VR =8V VR =1 5V 120 120 150 250 V F ** Forward voltage drop Tj = 25°C I F =1 0m A IF = 100 mA IF =1A 0.28 0.35 0.54 0.31 0.40 0.62 V * Pulse test tp = 380 µs, δ <2 % ** Pulse test tp = 5 ms, δ <2 % Note 1: IR at 23 V and Tj = 25°C is equal to 60 µA typ. STATIC ELECTRICAL CHARACTERISTICS Symbol Parameters Tests conditions Min. Typ. Max. Unit Cd Diode capacitance V R =5V F=1M H z 2 0 3 0 p F To evaluate the maximum conduction losses, use the following equations : P = 0.32 x IF(AV) + 0.23 x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS

I( A )P 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 T (°C)amb T δ=tp/T tp Printed circuit board FR4 S =2.25mmCU Fig. 1: Peak forward current versus ambient temperature (δ = 0.11). 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0 25 50 75 100 125 150 I( A )F(AV) T δ=tp/T tp T (°C)amb Printed circuit board FR4 S =2.25mmCU Fig. 2: Average forward current versus ambient temperature ( δ = 0.5). 1.E-03 1.E-02 1.E-01 1.E+00 Z/ Rth(j-a) th(j-a) t( s )p Single pulse S =2.25mmCU Fig. 3: Relative variation of thermal impedance junction to ambient versus pulse duration . 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 1.E+04 0 25 50 75 100 125 150 I( TRj Rj) / =25°CI( T ) T (°C)j V =5VR Fig. 5: Relative variation of reverse leakage currrent versus junction temperature (typical values). 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 1.E+04 0 2 4 6 8 1 01 21 41 61 82 02 22 4 I (µA)R V (V)R T =25°Cj T =85°Cj T =150°Cj Fig. 4: Reverse leakage currrent versus reverse voltage applied (typical values). 100 1 10 100 C(pF) V (V)R F=1MHz V =30mV T =25°C OSC RMS j Fig. 6: Junction capacitance versus reverse voltage applied (typical values).

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 I( A )FM T =25°Cj T =85°Cj T =150°Cj V( V )FM Fig. 7-1: Forward voltage drop versus forward current (typical values, high level). 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 I( A )FM T =85°C (typical values) j T =25°C (maximum values) j T =150°C (typical values) j T =25°C (typical values) j V( V )FM Fig. 7-2: Forward voltage drop versus forward current (low level). 100 150 200 250 300 350 400 450 500 550 600 0 5 10 15 20 25 30 35 40 45 50 R( ° C / W )th(j-a) S( m mCu ²) Fig. 8: Thermal resistance junction to ambient versus copper surface under tab (epoxy printed circuit board FR4, e CU=35µm, typical values). 100 150 200 250 300 350 400 450 500 550 600 650 700 0 50 100 150 200 250 300 350 400 R (°C/W)th(j-a) P(mW) S =2.25mmCU T =25°Camb Fig. 9: Thermal resistance junction to ambient versus power dissipation (epoxy printed circuit board FR4, e CU=35µm, typical values).

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not au- thorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2004 STMicroelectronics - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States PACKAGE MECHANICAL DATA SOD-323 H b D E A L Q1c REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 1.13 0.045 A1 0 0.1 0 0.004 b 0.25 0.44 0.01 0.017 c 0.1 0.25 0.004 0.01 D 1.52 1.8 0.06 0.071 E 1.11 1.35 0.044 0.053 H 2.3 2.7 0.09 0.106 L 0.1 0.46 0.004 0.02 Q1 0.1 0.41 0.004 0.016 Ordering type Marking Package Weight Base qty Delivery mode BAT20JFILM 20 SOD-323 0.005g 3000 Tape & reel ■ Epoxy meets UL94,V0