BAT15

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Dim. A B C D E F G H J K M N Q R Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01

2.54 BSC

4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040

0.100 BSC

0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Dimensions TO-220AB G G BTA15-200 BTA15-400 BTA15-600 BTA15-800 BTA15-1000 BTA15-1200 V DRM/RRM V 200 400 600 700 800 1000 1200 V DSM/RSM V 300 500 900 1100 1300 BTA15 Discrete Triacs(Isolated) Parame ter Value Unit IT(RMS) RMS on-state current (full sine wave) TO-220AB Tc = 100°C 15 A ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) F = 60 Hz t = 16.7 ms 160 A F = 50 Hz t = 20 ms 168 I²t I ²t Value for fusing tp = 10 ms 144 A²s dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr < 100 ns F = 120 Hz Tj = 125°C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 4 A PG(AV) Average gate power dissipation Tj = 125°C 1 W Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C ELECTRICAL CHARACTERISTICS (Tj = 25° C, unl es s othe rwise spec ified) ■ SNUBBE RL ES and LOGIC LEVEL(3 Quadrants) Symbo l Test Conditions Quadran t BTA Unit CW BW IGT VD = 12 V RL = 33 I - II - III MAX. 35 50 mA VGT I - II - III MAX. 1.3 V VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C I - II - III MIN. 0.2 V IH IT = 500 mA MAX. 35 50 mA IL IG = 1.2 IGT I - III MAX. 50 70 mA II 60 80 dV/dt V D = 67 % VDRM gate open Tj = 125°C MIN. 500 1000 V/µs (dI/dt)c Without snubber Tj = 125°C MIN. 14 A/ms Symbol Ω 8.5 VDSM/VRSM Non repetitive surge peak off-state voltage tp = 10 ms Tj = 25°C VDRM/VRRM + 100 V S G N I T A R M U M I X A M E T U L O S B A G BTA15-200 BTA15-400 BTA15-600 BTA15-800 BTA15-1000 BTA15-1200 VDRM/RRM V 200 400 600 700 800 1000 1200 VDSM/RSM V 300 500 900 1100 1300 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com

■ STANDARD (4 Quadrants) STATIC CHARACTERISTICS Symbol Test Conditions Quadrant Value Unit IGT VD = 12 V RL = 33 I - II - III IV MAX. 50 100 mA VGT ALL MAX. 1.3 V VGD VD = VDRM RL = 3.3 Tj = 125°C ALL MIN. 0.2 V IH IT = 500 mA MAX. 50 mA IL IG = 1.2 IGT I - III - IV MAX. 60 mA II 120 dV/dt VD = 67 % VDRM gate open Tj = 125°C MIN. 400 V/µs (dV/dt)c (dI/dt)c =7A/ms Tj = 125°C MIN. 10 V/µs Symbol Test Conditions Value Unit VTM ITM = 15 A tp = 380 µs Tj = 25°C MAX. 1.55 V Vto Threshold voltage Tj = 125°C MAX. 0.85 V Rd Dynamic resistance Tj = 125°C MAX. 60 mΩ IDRM IRRM VDRM = VRRM Tj = 25°C MAX. 5µ A Tj = 125°C 1 mA THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) 1.2 °C/W Rth(j-a) Junction to ambient °C/W60 PRODUCT SELECTOR Part Number Voltage (xxx) Sensitivity Type Package

200 V 100 V

BTA15 X X 50 mA Standard TO-220AB OTHER INFORMATION Part Number Marking Weight Base quantity Packing mode BTA15 BTA15 2 g 250 Bulk Ω Ω BTA15 Discrete Triacs(Isolated) ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com

F ig. 1 : Maximum pow er di s s ipation vers us R M S on-s tate cu rrent (fu ll cycl e). F ig. 2 -1: R M S on-s tate current v ers us c as e temperature (fu ll cycl e). F ig. 3 : R el ative v ariation of t hermal impeda nce versus pulse durat ion. 02468 10 12 14 160 IT (R MS ) (A ) P (W) 0 25 50 75 100 1250 T c (° C ) IT (R MS ) (A ) B TA B T B 1E -3 1E -2 1E -1 1E +0 1E +1 1E +2 5E +21E -2 1E -1 1E +0 tp (s ) K =[Zth/R th] Zth(j-c ) Zth(j-a) F ig. 4 : O n-s tate ch aracteris tics (m aximum values ) F ig. 5 : S urge peak on-s tate c urrent v ersus number of cycl es. 100 200 V T M (V ) IT M (A ) T j=25° C T j max T j max: V to = 0.85 V R d = 25 m Ω 1 10 100 10000 100 120 140 160 180 Number of c ycles IT S M (A ) Non repetitiv e T j initial=25°C R epetitive T c=85°C One cycle t=20ms BTA15 Discrete Triacs(Isolated) ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com

F ig. 6 : Non-repe titive s urge peak on-s tate current f or a s inus oidal pul s e w ith wi dth tp < 10m s, a nd c orres ponding value of I ²t. F ig. 7 : R el ative v ariation of gate t rigger current, holding curren t and l atching current v ersus junction temperature (typical values ). F ig. 8 : R e lative v ariation of c ritical rate of dec reas e of main curren t v ers us (dV /dt)c (typical values ). F ig. 9 : R el ative v ariation of c ritical rat e of decreas e of m ain c urrent v ers us j unction temperature. 0.01 0.10 1.00 10.00100 1000 3000 tp (ms ) IT S M (A ), I² t (A ² s ) T j initial=25°C IT S M I²t dI/dt limitation: 50A /µ s -40 -20 0 20 40 60 80 100 120 1400.0 0.5 1.0 1.5 2.0 2.5 T j(° C ) IG T,IH,IL [T j] / IG T ,IH,IL [T j=25° C ] IG T IH & IL 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 (dV /dt)c (V /µ s ) (dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c B W/C W/T 1635 C B S W 0 25 50 75 100 1250 T j (° C ) (dI/dt)c [T j] / (dI/dt)c [T j s pec ified] BTA15 Discrete Triacs(Isolated) ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com