BAT10

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Discrete Triacs(Isolated) ABSOLUTE MAXIMUM RATINGS Parameter V Unit IT(RMS) RMS on-state current (full sine wave) TO-220AB Tc = 105°C 10 A ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) F = 60 Hz t = 16.7 ms 100 A F = 50 Hz t = 20 ms 105 I²tI ²t Value for fusing tp = 10 ms 55 A²s dI/dt Critical rate of rise of on-state current IG = 2 x I GT , tr < 100 ns F = 120 Hz Tj = 125°C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 4 A PG(AV) Average gate p ower diss ipation Tj = 125°C 1 W Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) ■ SNUBBERLESS and LOGIC LEVEL(3 Quadrants) Symbol Test Conditions Quadrant BTA Unit CW BW IGT VD = 12 V RL = 33 I - II - III MAX. 35 50 mA VGT I - II - III MAX. 1.3 V VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C I - II - III MIN. 0.2 V IH IT = 500 mA MAX. 35 50 mA IL IG = 1.2 IGT I - III MAX. 50 70 mA II 60 80 dV/dt VD = 67 % VDRM gate open Tj = 125°C MIN. 500 1000 V/µs (dI/dt)c Without snubber Tj = 125°C MIN. 9.0 A/ms Dim. A B C D E F G H J K M N Q R Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01

2.54 BSC

4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040

0.100 BSC

0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Dimensions TO-220AB G G Symbol Ω 5.5 VDSM/VRSM Non repetitive surge peak off-state voltage tp = 10 ms Tj = 25°C VDRM/VRRM + 100 V BTA10-200 BTA10-400 BTA10-600 BTA10-800 BTA10-1000 BTA10-1200 V DRM/RRM V 200 400 600 700 800 1000 1200 V DSM/RSM V 300 500 900 1100 1300 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com

■ STANDARD (4 Quadrants) STATIC CHARACTERISTICS Symbol Test Conditions Quadrant Value Unit IGT VD = 12 V RL = 33 I - II - III IV MAX. 50 100 mA VGT ALL MAX. 1.3 V VGD VD = VDRM RL = 3.3 Tj = 125°C ALL MIN. 0.2 V IH IT = 500 mA MAX. 50 mA IL IG = 1.2 IGT I - III - IV MAX. 50 mA II 100 dV/dt VD = 67 % VDRM gate open Tj = 125°C MIN. 400 V/µs (dV/dt)c (dI/dt)c =4.4 A/ms Tj = 125°C MIN. 10 V/µs Symbol Test Conditions Value Unit VTM ITM = 10 A tp = 380 µs Tj = 25°C MAX. 1.55 V Vto Threshold voltage Tj = 125°C MAX. 0.85 V Rd Dynamic resistance Tj = 125°C MAX. 40 mΩ IDRM IRRM VDRM = VRRM Tj = 25°C MAX. 5µ A Tj = 125°C 1 mA THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) 1.5 °C/W Rth(j-a) Junction to ambient °C/W60 PRODUCT SELECTOR Part Number Voltage (xxx) Sensitivity Type Package

200 V 100 V

BTA10 X X 50 mA Standard TO-220AB OTHER INFORMATION Part Number Marking Weight Base quantity Packing mode BTA10 BTA10 2.3 g 250 Bulk Ω Ω BTA10 Discrete Triacs(Isolated) ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com

F ig. 1 : M aximum po wer di s s ipation v ers us R MS on-s tate c urrent (f ull c ycle). F ig. 2 : R M S on-s tate c urrent v ers us cas e temperature (full c ycle). F ig. 3 : R e lative v ariation of t her mal impeda nce versus pulse duration. F ig. 4 : O n-s tate characteris tics ( maximum values ). F ig. 5 : S urge pe ak on-s tate c urrent v ers us number of cycl es . F ig. 6 : Non-repet itive s urge pea k on-s tate current f or a s inus oidal puls e wi th wi dth tp < 10m s, and c orres ponding value of I ²t. 01 23 4 5 6 7 89 100 IT (R MS ) (A ) P (W) 0 25 50 75 100 1250 T c (°C ) IT (R MS ) (A ) B TA B T B 1E -3 1E -2 1E -1 1E +0 1E +1 1E +2 5E +21E -2 1E -1 1E +0 tp (s ) K =[Zth/R th] Zth(j-c ) Zth(j-a) 100 V T M (V ) IT M (A ) T j=25°C T j maxT j max. V to = 0.85 V R d = 40 m W 1 10 100 10000 100 110 Number of c ycles IT S M (A ) Non repetitive T j initial=25°C R epetitive T c=95°C One cycle t=20ms 0.01 0.10 1.00 10.0010 100 1000 tp (ms ) IT S M (A ), I² t (A ² s ) T j initial=25°C IT S M I²t dI/dt limitation: 50A /µs BTA10 Discrete Triacs(Isolated) ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com

F ig. 7 : R el ative v ariation of gat e trigger c urrent, holding c urrent an d latching c urrent v ers us junction temperature ( typical values). F ig. 8 : R elative variation of critical rate of decreas e of main current versus (dV /dt)c (typical values). F ig. 9 : R el ative v ariation of c ritical rate of dec reas e of m ain current v ers us j unction temperature. -40 -20 0 20 40 60 80 100 120 1400.0 0.5 1.0 1.5 2.0 2.5 T j(°C ) IG T,IH,IL [T j] / IG T ,IH,IL [T j=25°C ] IG T IH & IL 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 (dV /dt)c (V /µs ) (dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c B W/C W C B 0 25 50 75 100 1250 T j (°C ) (dI/dt)c [T j] / (dI/dt)c [T j s pec ified] BTA10 Discrete Triacs(Isolated) ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com