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/c183 /c183 /c183 /c183 Mechanical Data A C B Dim Min Max A 3.30 3.70 B 1.30 1.60 C 0.28 0.50 All Dimensions in mm @ T A = 25/c176C unless otherwise specified Maximum Ratings and Electrical Characteristics /c183 SOD-80 /c183 Case: /c183 /c183 /c183 Component in accordance to RoHS 2002/95/EC Lead (Pb)-free component The low forward voltage drop and fast switching Metal-on-silicon Schottky barrier device which is This diode features low turn-on voltage. For general purpose applications The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. protected by a PN junction guard ring. make it ideal for protection of MOS devices, steer- ing, biasing and coupling diodes for fast switching and low logic level applications and WEEE 2002/96/EC Weight: approx. 31 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box Valid provided that electrodes are kept at ambient temperature Parameter Test condition Symbol Value Unit Continuous reverse voltage V R 50 V Forward continuous current T amb = 25 °C I F 200 mA Repetitive peak forward current t p < 1 s, T amb = 25 °C, ν ≤ 0.5 I FRM 500 mA Power dissipation T amb = 25 °C P tot 200 mW Parameter Test condition Symbol Min Typ. Max Unit Reverse breakdown voltage I R = 10 µA (pulsed) V (BR) 50 V Leakage current V R = 40 V I R 5µ A Forward voltage Pulse test t p < 300 µs, I F = 0.1 mA, δ < 2 % V F 200 300 mV Pulse test t p < 300 µs, I F = 1 mA, δ < 2 % V F 275 380 mV Pulse test t p < 300 µs, I F = 10 mA, δ < 2 % V F 365 450 mV Pulse test t p < 300 µs, I F = 30 mA, δ < 2 % V F 460 600 mV Pulse test t p < 300 µs, I F = 100 mA, δ < 2 % V F 700 900 mV Diode capacitance V R = 1 V, f = 1 MHz C tot 8p F Reverse recovery time I F = 10 mA, I R = 10 mA, I rr = 1 mA, t rr 5n s