BAS86 SEMTECH_ELEC | Alldatasheet
Document overview
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Technical content
Features
- Low forward voltage.
- Guard ring protected.
- Hermetically-sealed leaded glass package.
- High breakdown voltage. Absolute Maximum Ratings (Ta = 25oC) Parameter Symbol Limits Unit Continuous reverse voltage V R 50 V Continuous forward current I F 200 mA Average forward current I F(AV) 200 mA Repetitive peak forward current tp≦1sec.; δ≦0.5 IFRM 500 mA Non-repetitive peak forward current t p=10ms IFSM 5 A Operating ambient temperature T amb -65 to +125 ℃ Junction temperature T j 125 ℃ Storage temperature range T S -65 to +150 ℃ Thermal resistance from junction to ambient Rthj-a 320 K/W Characteristics at Ta = 25oC Parameter Symbol Min. Typ. Max. Unit Forward voltage a t IF = 0.1mA a t IF = 1mA a t IF = 10mA a t IF = 30mA a t IF = 100mA VF VF VF VF VF 300 380 450 600 900 mV mV mV mV mV Reverse current (Note 1) a t VR = 40V IR μA Reverse recovery time a t IF = 10mA, IR = 10mA, RL = 100Ω trr ns Diode capacitance a t V R = 1V, f = 1MHz Cd pF Note 1: Pulsed test: tp=300μs; δ=0.02. LL34
Dated : 12/03/2005 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) BAS86
Dated : 12/03/2005 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) BAS86